TC55VCM416BTGN55LA Toshiba, TC55VCM416BTGN55LA Datasheet - Page 4

• Manufacturer Part Number: TC55VCM416BTGN55LA
• Description: IC SRAM 16MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM416BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM416BTGN55LB

OPERATING MODE
MAXIMUM RATINGS
DC RECOMMENDED OPERATING CONDITIONS (
Read
Write
Output Deselect
Standby
V
V
V
P
T
T
T
*1
V
V
V
V
*2
SYMBOL
solder
stg
a
DD
IN
I/O
D
DD
IH
IL
DH
: − 1.0 V when measured at a pulse width of 10ns
: − 1.0 V when measured at a pulse width of 10ns
SYMBOL
* = don't care
H = logic high
L = logic low
MODE
Power Supply Voltage
Input High Voltage
Input Low Voltage
Data Retention Supply Voltage
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Ambient Temperature
PARAMETER
CE
H
L
L
L
L
L
L
L
L
L
*
1
CE2
H
H
H
H
H
H
H
H
H
RATING
L
*
TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
OE
H
H
H
L
L
L
*
*
*
*
*
2.3 V ≤ V
2.7 V ≤ V
1.65 V ≤ V
1.8 V ≤ V
TSOP type
BGA type
TEST CONDITION
R/W
H
H
H
H
H
H
L
L
L
*
*
DD
DD
DD
⎯
⎯
⎯
DD
< 2.7 V
≤ 3.6 V
≤ 2.2 V
< 1.8 V
LB
H
H
H
L
L
L
L
L
L
*
*
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
UB
− 0.5~V
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
H
H
H
L
L
L
L
L
L
*
*
− 0.3
− 0.3
− 0.3~4.2
− 55~150
− 55~125
MIN
2.3
2.0
2.2
1.5
− 40~85
⎯
⎯
Ta = −40° to 85°C
260
0.6
Output
High-Z
Output
Input
High-Z
Input
High-Z
High-Z
High-Z
High-Z
High-Z
*2
*1
DD
~4.2
I/O1~I/O8
+ 0.5
V
V
V
DD
DD
DD
MAX
3.6
3.6
⎯
⎯
VALUE
× 0.24
+ 0.3
+ 0.3
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
Output
Output
High-Z
Input
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
− 0.5~V
− 0.3
I/O9~I/O16
1.65
− 0.3
MIN
1.4
1.6
1.0
− 0.3~2.5
− 55~150
− 55~125
⎯
⎯
)
− 40~85
*2
260
0.6
*1
DD
~2.5
2005-08-09 4/18
+ 0.5
V
V
V
DD
DD
DD
MAX
2.2
2.2
⎯
⎯
× 0.22
+ 0.3
+ 0.3
POWER
I
I
I
I
I
I
I
I
I
I
I
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDS
DDS
UNIT
°C
°C
°C
°C
UNIT
W
V
V
V
V