TC58FVM7B5BTG-65 Toshiba, TC58FVM7B5BTG-65 Datasheet - Page 26
![no-image](/images/manufacturer_photos/0/6/668/toshiba_sml.jpg)
TC58FVM7B5BTG-65
Manufacturer Part Number
TC58FVM7B5BTG-65
Description
IC FLASH 128MBIT 65NS 56TSOP
Manufacturer
Toshiba
Datasheet
1.TC58FVM7T5BTG65.pdf
(88 pages)
Specifications of TC58FVM7B5BTG-65
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
65ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 26 of 88
- Download datasheet (805Kb)
11. DATA PROTECTION
The TC58FVM7(T/B)5B includes a function which guards against malfunction or data corruption.
11.1. Protection against Program/Erase Caused by Low Supply Voltage
state, command input is ignored.
If V
operation is not executed again when V
execute Auto operation again.
When V
11.2. Protection against Malfunction Caused by Glitches
than 3 ns (Typ.) input on WE , CE or OE . However, if a glitch exceeding 3 ns (Typ.) occurs and the glitch is input to the
device malfunction write may occur.
The device uses standard JEDEC commands. It is conceivable that, in extreme cases, system noise may be misinterpreted as
part of a command sequence input and that the device will acknowledge it. Then, even if a proper command is input, the device
may not operate. To avoid this possibility, clear the Command Register before command input. In an environment prone to
system noise, Toshiba recommends input of a software or hardware reset before command input.
11.3. Protection against Malfunction at Power-on
does not latch the command on the first rising edge of WE or CE . Instead, the device automatically Resets the Command
Register and enters Read Mode.
To prevent malfunction at power-on or power-down, the device will not accept commands while V
To prevent malfunction write during operation caused by noise from the system, the device will not accept pulses shorter
To prevent damage to data caused by sudden noise at power-on, when power is turned on with WE = CE =V
DD
drops below V
DD
> V
LKO
, make up countermeasure to be input accurately command in system side please.
LKO
during an Auto Operation, the device will terminate Auto-Program execution. In this case, Auto
DD
returns to recommended V
DD
voltage. Therefore, command need to be input to
TC58FVM7(T/B)5B(TG/XG)65
DD
2006-05-10 26/88
is below V
IL
LKO
the device
. In this
Related parts for TC58FVM7B5BTG-65
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MG100Q2YS65H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG30G6EL2](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MP6759](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG400J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG30J103H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG600J2YS60A](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG1200V1US51](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG300J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG150J7KS50](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG15J503H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG75J6CSB1W](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG75J201H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG400J2YS60A](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG50J7CSB1W](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG300J2YS40](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: