HYB18T512160BF-3S Qimonda, HYB18T512160BF-3S Datasheet - Page 10
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HYB18T512160BF-3S
Manufacturer Part Number
HYB18T512160BF-3S
Description
IC DDR2 SDRAM 512MBIT 84TFBGA
Manufacturer
Qimonda
Datasheet
1.HYB18T512800BF-3.7.pdf
(58 pages)
Specifications of HYB18T512160BF-3S
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
333MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 95°C
Package / Case
84-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1015-2
Notes
1. RDQS / RDQS are enabled by EMRS(1) command.
2. If RDQS / RDQS is enabled, the DM function is disabled
3. When enabled, RDQS & RDQS are used as strobe signals during reads.
4.
5. Ball position L8 is A13 for 512-Mbit .
Rev. 1.2, 2007-11
03292006-YBYM-WG0Z
V
are isolated on the device.
DDL
and
V
SSDL
are power and ground for the DLL.
V
DDL
Configuration for ×8 Components, TFBGA-60 (top view)
is connected to
10
V
DD
on the device.
512-Mbit Double-Data-Rate-Two SDRAM
V
DD
HYB18T512[40/80/16]0BF
,
V
DDQ
,
Internet Data Sheet
V
SSDL
FIGURE 2
,
V
SS
, and
V
SSQ