SDED5-512M-N9T SanDisk, SDED5-512M-N9T Datasheet - Page 59

• Manufacturer Part Number: SDED5-512M-N9T
• Description: IC MDOC H3 4GB 115-FBGA
• Manufacturer: SanDisk

Specifications of SDED5-512M-N9T

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 115-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 585-1236-2

Rev. 1.3
Notes: 1. Note: AVD must be asserted on the following clock after the assertion of CE.
9.8.2.2
The Write mode is similar to the Read mode with the following exceptions:
Note: WE is sampled on the 1
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clock cycle, after that the status of the WE signal is not important (Ø).
2. No collision should be allowed between the AVD and OE signal.
WAIT_STATE = 0: 1 clock added.
WAIT_STATE = 1: 2 clocks added.
WAIT_STATE = 2: 3 clocks added.
WAIT_STATE = 3: 4 clocks added.
Burst CLK
Data
AVD
Write Mode
OE
CE
Valid address
Figure 17: Multiplexed Read Busrt Mode
st
Figure 1818: Demux Write Burst Mode
Latency=1
clock after CE assertion. It must be active (low) for at least one
D0
D1
mDOC H3 EFD Featuring Embedded TrueFFS Data Sheet
D2
D3
D4
D5
D6
Design Considerations
D7
92-DS-1205-10