LM5067MMX-2/NOPB National Semiconductor, LM5067MMX-2/NOPB Datasheet - Page 16

• Manufacturer Part Number: LM5067MMX-2/NOPB
• Description: IC CTLR NEG HOTSWAP A/R 10MSOP
• Manufacturer: National Semiconductor
• Type: Hot-Swap Controllerr

Specifications of LM5067MMX-2/NOPB

• Applications: General Purpose
• Internal Switch(s): No
• Voltage - Supply: -9 V ~ -80 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Linear Misc Type: Negative Voltage
• Family Name: LM5067-2
• Package Type: MSOP
• Operating Supply Voltage (min): -9V
• Operating Supply Voltage (max): -80V
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Product Depth (mm): 3mm
• Product Height (mm): 0.86mm
• Product Length (mm): 3mm
• Mounting: Surface Mount
• Pin Count: 10
• For Use With: LM5067EVAL - NEGATIVE HOT SWAP / INRUSH CURRE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LM5067MMX-2

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B) Turn-on with power limit and current limit: The power
dissipation limit in Q1 (P
the PWR pin, and the current sense resistor R
FIGURE 9. Load Draws Current During Turn-On
FET(LIM)
) is defined by the resistor at
FIGURE 10. MOSFET Power Up Waveforms
30030939
S
. See the
16
Power Limit Threshold section. If the current limit threshold
(I
threshold at maximum V
ates initially in power limit mode when the V
and then transitions to current limit mode as the current in-
creases to I
the load (R
output voltage to reach its final value is approximately equal
to:
For example, if V
P
rent level (I
Period must be set longer than t
LIM
FET(LIM)
) is higher than the current defined by the power limit
= 20W, t
L
LIM
) is not connected during turn-on, the time for the
P
) is approximately 0.42A. The Fault Timeout
as V
ON
SYS
DS
calculates to
= -48V, C
decreases. See Figure 10b. Assuming
DS
(P
FET(LIM)
L
≊
= 1000 µF, I
ON
68 ms, and the initial cur-
.
/V
SYS
) the circuit oper-
DS
30030941
LIM
of Q1 is high,
= 1A, and