ISL6140IBZ Intersil, ISL6140IBZ Datasheet - Page 17

• Manufacturer Part Number: ISL6140IBZ
• Description: IC CONTROLLER HOT PLUG 8-SOIC
• Manufacturer: Intersil
• Type: Hot-Swap Controllerr

Specifications of ISL6140IBZ

• Applications: General Purpose, VoIP
• Internal Switch(s): No
• Voltage - Supply: 36 V ~ 72 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Optional Components
D
D
uses both D
just D
connect the DRAIN pin to C
typical diode.
SW1 is a push-button switch, that can manually reset
the fault latch after an overcurrent shutdown. It can
also be replaced by a transistor switch.
R
that small transients on the input supply do not trigger
UV or OV.
R
R
section for more details.
R
component acting as a pull-up device. An LED can also
be placed in series with R
C
also be considered input capacitance for the external
module.
R
which already has a built-in 20mV hysteresis. With R
-V
10
7
7
8
L
6
1
2
IN
GND
GND
(SHORT PIN)
is any extra output Load capacitance, which can
and C
should be shorted, if not used. See the overcurrent
is a pull-up resistor for PWRGD, if there is no other
is used to add more hysteresis to the UV threshold,
and D
is a voltage suppressor; SMAT70A or equivalent.
NFET*
(INSTEAD
OF SW1)
G
and C
2
. If neither is used, short the path of either, to
3
3
4
are used to delay the overcurrent shutdown.
are DRAIN diodes; the ISL6150 (H version)
2
are used to filter the V
and D
C4*
3
; the ISL6140 (L version) uses
SW1
D
1
*
FIGURE 29. ISL6140/50 OPTIONAL COMPONENTS (SHOWN WITH *)
R
8
17
R
11
, if desired (see Figure 8).
12
2
and Q
R
5
DD
1
R
. The 1N4148 is a
4
voltage, such
R
UV
6
OV
*
ISL6140, ISL6150
V
V
DD
EE
R
10
C3*
R
*
1
6
R
SENSE
,
7
*
ISL6140 (L)
Vuv falling
C
Vuv RISING
the new thresholds with a rising and falling input are
shown in Equation 3 and 4:
Since R
will reduce the available gate current, which will reduce
the dv/dt across the MOSFET and hence the inrush
current. The value of R
possible (greater than 500k recommended) so that it
does not drag down the GATE voltage below the value
required to ensure the MOSFET is fully enhanced.
Figure 30 shows a sample component placement and
routing for the typical application shown in Figure 31.
1
GATE
(
(
Q
1
R
2
6
R
) VUVL
3
is connected directly to the GATE output, it
=
D
)
PWRGD
2
C
=
*
2
DRAIN
VUVH
•
⎛
⎝
R5 R6
------------------------------------------------------------------------------
D
•
3
*
⎛
⎝
•
R5 R6
------------------------------------------------------------------------------
6
should be kept as high as
•
+
R4 R6
R5 R6
+
R
•
•
8
R4 R6
R5 R6
*
•
•
+
R4 R5
+
•
R4 R5
•
⎞
⎠
–
-V
Vgate
OUT
⎞
⎠
CL*
FN9039.4
GND
(EQ. 3)
(EQ. 4)
•
⎛
⎝
R4
------- -
R6
⎞
⎠