MC34652EF Freescale Semiconductor, MC34652EF Datasheet - Page 23

• Manufacturer Part Number: MC34652EF
• Description: IC CTRLR HOT SWAP NEG V 16-SOIC
• Manufacturer: Freescale Semiconductor
• Type: Hot-Swap Switchr

Specifications of MC34652EF

• Applications: General Purpose
• Internal Switch(s): Yes
• Current Limit: 2.0A
• Voltage - Supply: 15 V ~ 80 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SHORT CIRCUIT DETECTION
Power MOSFET is discharged very fast (in less than 10 μ s)
to try to regulate the current, and the 34652 is in the
overcurrent mode for 3.0 ms. Then it follows the pattern
outlined in the
POWER MOSFET ENERGY CAPABILITY
device’s internal Power MOSFET under a drain to source
voltage of 82 V and an ambient temperature of 90°C. It is
compared to the energy levels required for the capacitive
loads of 100 μ F, 200 μ F, and 400 μ F at 80 V for the
discharge periods of 16 ms, 32 ms, and 64 ms, respectively.
It is clear that the Power MOSFET well exceeds the required
energy capability for all three cases with a sufficient margin.
For example, the 400 μ F capacitor load with a 64 ms
discharge time requires an energy capability of about
1540 mJ, which is well below the Power MOSFET capability
of about 3500 mJ. As a result of this analysis, the 33652 is
expected to more than meet all energy capability
requirements for the possible capacitive loads.
Analog Integrated Circuit Device Data
Freescale Semiconductor
If the current going through the load becomes > 5.0 A, the
Figure 24
shows a projected energy capability of the
Overcurrent Limit
paragraph above.
MOSFET Compared to the Required Energy Levels of
Figure 24. Projected Energy Capability of the Power
3500
3000
2500
2000
1500
1000
500
0
0
Estimated for Area =1.7 mm
400 μF
200 μF
100 μF
20
Time (ms)
TYPICAL APPLICATIONS
40
2
60
34652
23