TZA3047BVH/C1,557 NXP Semiconductors, TZA3047BVH/C1,557 Datasheet - Page 22

• Manufacturer Part Number: TZA3047BVH/C1,557
• Description: IC LASER DRIVER 1.25GBPS 32-HBCC
• Manufacturer: NXP Semiconductors
• Type: Laser Diode Driver (Fiber Optic)r

Specifications of TZA3047BVH/C1,557

• Data Rate: 1.25Gbps
• Number Of Channels: 1
• Voltage - Supply: 3.14 V ~ 3.47 V
• Current - Supply: 40mA
• Current - Modulation: 100mA
• Current - Bias: 100mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-HBCC
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935270561557; TZA3047BVHW; TZA3047BVHW

Philips Semiconductors
Table 1 Physical characteristics of the bare die
2003 Jun 05
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
30 Mbits/s up to 1.25 Gbits/s laser drivers
PARAMETER
ALRESET
GNDESD
GNDRF
GNDRF
GNDRF
GNDRF
V CCA
V CCA
V CCD
V CCD
TEST
CINQ
DINQ
CIN
DIN
10
12
13
14
15
11
1
2
3
4
5
6
7
8
9
0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m of silicon nitride
minimum dimension of exposed metallization is 80
2.8 m AlCu
380 m nominal
2.560
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attachment is by gluing
<15 s
16
57
2.510 mm (6.43 mm
17
56
18
55
i.c.
Fig.10 TZA3047UH die.
i.c.
19
54
x
20
TZA3047UH
53
i.c.
21
0
22
52
y
0
2.56 mm
22
2
51
)
50
23
49
24
VALUE
48
25
47
i.c.
i.c.
26
38
34
46
TZA3047A; TZA3047B
45
44
43
42
41
40
39
37
36
35
33
32
31
30
29
28
27
80 m (pad size = 90
V CCO
V CCO
BIAS
GNDO
LA
LA
LA
LA
GNDO
GNDO
GNDO
LAQ
LAQ
LAQ
GNDO
PWA
LAQ
MDB319
2.51
mm
Product specification
90 m)