BD8113EFV-E2 Rohm Semiconductor, BD8113EFV-E2 Datasheet - Page 4

• Manufacturer Part Number: BD8113EFV-E2
• Description: IC WHITE LED DVR BKLT 24HTSSOP
• Manufacturer: Rohm Semiconductor
• Type: Backlight, White LEDr

Specifications of BD8113EFV-E2

• Topology: PWM, Step-Down (Buck), Step-Up (Boost)
• Number Of Outputs: 2
• Internal Driver: Yes
• Type - Primary: Backlight
• Type - Secondary: White LED
• Frequency: 250kHz ~ 600kHz
• Voltage - Supply: 5 V ~ 30 V
• Voltage - Output: 36V
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP Exposed Pad, 24-eTSSOP, 24-HTSSOP
• Operating Temperature: -40°C ~ 105°C
• Current - Output / Channel: 150mA
• Internal Switch(s): Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Efficiency: -

●Cautions on use
1．Absolute maximum ratings
2．Reverse polarity connection
3．Power supply line
4．GND line
5．Thermal design
6．Short circuit mode between terminals and wrong mounting
7．Radiation
8．ASO(Area of Safety Operation.)
9．TSD(Thermal shut-down)
10．Inspection by the set circuit board
11．IC terminal input
12．Earth wiring pattern
We are careful enough for quality control about this IC. So, there is no problem under normal operation, excluding that it exceeds the absolute
maximum ratings. However, this IC might be destroyed when the absolute maximum ratings, such as impressed voltages or the operating
temperature range(Topr), is exceeded, and whether the destruction is short circuit mode or open circuit mode cannot be specified. Please take
into consideration the physical countermeasures for safety, such as fusing, if a particular mode that exceeds the absolute maximum rating is
assumed.
Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the direction protection
device as a diode in the supply line.
Due to return of regenerative current by reverse electromotive force, using electrolytic and ceramic suppress filter capacitors (0.1μF) close to
the IC power input terminals (Vcc and GND) are recommended. Please note the electrolytic capacitor value decreases at lower temperatures and
examine to dispense physical measures for safety.
And, for ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal powering sequence and
delays. Therefore, give special consideration to power coupling capacitance, width of power wiring, GND wiring, and routing of wiring. Please make
the power supply lines (where large current flow) wide enough to reduce the resistance of the power supply patterns, because the resistance of
power supply pattern might influence the usual operation.
The ground line is where the lowest potential and transient voltages are connected to the IC.
Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design enough temperature
margins.
Do not mount the IC in the wrong direction and be careful about the reverse-connection of the power connector. Moreover, this IC might be
destroyed when the dust short the terminals between them or power supply, GND.
Strong electromagnetic radiation can cause operation failures.
Do not exceed the maximum ASO and the absolute maximum ratings of the output driver．
The TSD is activated when the junction temperature (Tj) reaches 175℃(with 25℃ hysteresis), and the output terminal is switched to Hi-z. The
TSD circuit aims to intercept IC from high temperature. The guarantee and protection of IC are not purpose. Therefore, please do not use this IC
after TSD circuit operates, nor use it for assumption that operates the TSD circuit.
The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge electricity in each and all
process. Moreover, in the inspection process, please turn off the power before mounting the IC, and turn on after mounting the IC. In addition,
please take into consideration the countermeasures for electrostatic damage, such as giving the earth in assembly process, transportation or
preservation.
This IC is a monolithic IC, and has P
P-layer and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When
the GND voltage potential is greater than the voltage potential at Terminals A or B, the PN junction operates as a parasitic diode. In addition, the
parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said parasitic diode. These parasitic
elements are formed in the IC because of the voltage relation. The parasitic element operating causes the wrong operation and destruction.
Therefore, please be careful so as not to operate the parasitic elements by impressing to input terminals lower voltage than GND(P substrate).
Please do not apply the voltage to the input terminal when the power-supply voltage is not impressed. Moreover, please impress each input
terminal lower than the power-supply voltage or equal to the specified range in the guaranteed voltage when the power-supply voltage is
impressing.
Use separate ground lines for control signals and high current power driver outputs. Because these high current outputs that flows to the wire
impedance changes the GND voltage for control signal. Therefore, each ground terminal of IC must be connected at the one point on the set
circuit board. As for GND of external parts, it is similar to the above-mentioned.
+
isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this
Simplified structure of IC
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