LM5111-2MY/NOPB National Semiconductor, LM5111-2MY/NOPB Datasheet - Page 3

• Manufacturer Part Number: LM5111-2MY/NOPB
• Description: IC MOSFET DRIVER DUAL 5A 8-EMSOP
• Manufacturer: National Semiconductor

Specifications of LM5111-2MY/NOPB

• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 25ns
• Current - Peak: 5A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 3.5 V ~ 14 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP Exposed Pad, 8-HMSOP, 8-eMSOP
• Number Of Drivers: 2
• Driver Configuration: Inverting
• Driver Type: Low Side
• Input Logic Level: TTL
• Rise Time: 25ns
• Fall Time: 25ns
• Propagation Delay Time: 40ns
• Operating Supply Voltage (max): 14V
• Peak Output Current: 5mA
• Output Resistance: 1.4/30Ohm
• Operating Supply Voltage (min): 3.5V
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: MSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Compliant
• Other names: LM5111-2MY; LM5111-2MYTR

V
V
I
CONTROL INPUTS
V
V
V
V
HYS
I
I
OUTPUT DRIVERS
R
R
I
I
CC
IL
IH
Source
Sink
CCR
CCH
IH
IL
thH
thL
OH
OL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
T
V
IN to V
Symbol
J
CC
= −40°C to +125°C, V
to V
EE
EE
V
V
(rising)
V
Hysteresis
V
Logic High
Logic Low
High Threshold
Low Threshold
Input Hysteresis
Input Current Low
Input Current High
Output Resistance High
Output Resistance Low
Peak Source Current
Peak Sink Current
CC
CC
CC
CC
Operating Range
Supply Current (I
Under Voltage Lockout
Under Voltage Lockout
Parameter
CC
= 12V, V
CC
)
EE
= 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
−0.3V to 15V
−0.3V to 15V
V
V
IN_A = IN_B = 0V (5111-1)
IN_A = IN_B = V
IN_A = V
IN_A=IN_B=V
IN_B=V
IN_A=IN_B=V
IN_A=IN_B=V
IN_A=V
I
I
OUTA/OUTB = V
200 ns Pulsed Current
OUTA/OUTB = V
200 ns Pulsed Current
OUT
OUT
(Note 1)
CC
CC
−V
−V
= −10 mA (Note 2)
= + 10 mA (Note 2)
EE
EE
CC
CC
CC
(5111-3)
(5111-3)
, IN_B = 0V (5111-3)
Conditions
CC
CC
CC
CC
3
(5111-1-2-3)
(5111-2)
(5111-1)
CC
CC
(5111-2)
/2,
/2,
Storage Temperature Range, (T
Maximum Junction Temperature,
Operating Junction Temperature
ESD Rating
(T
J
(max))
Min
3.5
2.3
2.2
1.3
0.8
−1
10
−1
10
-1
1.75
1.35
Typ
230
400
2.9
0.1
0.1
0.1
1.4
18
18
30
1
1
1
3
5
STG
)
−55°C to +150°C
Max
3.5
0.8
2.2
2.0
2.5
14
25
25
50
2
2
2
1
1
1
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+150°C
+125°C
Units
mV
mA
mV
2kV
µA
Ω
Ω
V
V
V
V
V
V
A
A