SI9910DY-T1-E3 Vishay, SI9910DY-T1-E3 Datasheet
SI9910DY-T1-E3
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SI9910DY-T1-E3 Summary of contents
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... Zener diode to ground. One benefit that power MOSFETs offer is their intrinsic diodes which can serve as reliable and efficient voltage clamps. PULL-DOWN V SS FIGURE 1. Si9910 Block Diagram AN705 Vishay Siliconix The driver’s CMOS logic R3 *100 k C1 DRAIN * PULL-UP R2 *250 I SENSE R1 *0.1 * Typical Values www.vishay.com FaxBack 408-970-5600 1 ...
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... The power switching arrangement most commonly used is the half-bridge configuration. half-bridge, each motor winding is connected to a common node between switching devices that can connect it to either the motor supply voltage or to the motor supply return. In www.vishay.com FaxBack 408-970-5600 2 DRAIN PULL-UP PULL-DOWN ...
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... The only 1 Addressing this issue in high-voltage (500 V) applications is a new line of MOSPOWER transistors from Vishay Siliconix with intrinsic diode recovery times rivaling discrete fast-recovery diodes. However, even these fast-recovery diodes don’t solve all the problems associated with flyback energy and diode recovery ...
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... INPUT Figure 4. Controlling di/dt via MOSFET Gate Drive Impedance The Si9910 I input can be used in conjunction with a SENSE very low-value external sense resistor to directly limit the maximum peak current (Figure 5). Figure 6 illustrates a www.vishay.com FaxBack 408-970-5600 4 DRAIN PULL-UP PULL-DOWN I SENSE (Q1 (Q2) rr Diode Recovery ...
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... Document Number: 70579 15-Feb-94 DRAIN Overcurrent PULL-UP Protection PULL-DOWN A V (Q1 (Q2 (Q1 (Q1 Figure 5. Limiting Peak Current R2 R SENSE AN705 Vishay Siliconix V+ Q2 Motor Winding and SENSE R SENSE (R1) I PEAK (Not to Scale) I MOTOR DRAIN C1 PULL-UP R2 PULL-DOWN Figure 7. Simplified dv/dt Feedback Circuit www.vishay.com FaxBack 408-970-5600 5 ...
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... www.vishay.com FaxBack 408-970-5600 6 the common base of the emitter-follower stage changes from a low to a high level, the output follows, turning the power SENSE MOSFET on. As the power MOSFET switches voltage across its drain-source decreases rapidly. The rate of dv/dt will depend on all of the conditions described earlier that are associated with diode reverse recovery ...
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... Figure 9 illustrates both the charge pump and bootstrap circuits used in conjunction with an Si9910 in a high- side driver application. www.vishay.com FaxBack 408-970-5600 AN705 Vishay Siliconix ...
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... V drain input is not in use, it must be left open. When the I input is not in use, it should be shorted to V Using surface-mount driver ICs, such as the Si9910DY shown in Figure 11 substrate with power MOSFET chips holds great promise for next-generation motor drives. The power MOSFET can be mounted directly on a substrate with good ...
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... Document Number: 70579 15-Feb-94 DRAIN PULL-UP PULL-DOWN I SENSE (Q1 (Q2) rr (Q1) (Q1 Figure 10. All Feedback Options Active INPUT DRAIN of power Figure 11. Si9910DY and Si9910DJ Package Pin-Outs AN705 Vishay Siliconix V+ Q2 Motor Winding and Limit PEAK (Not to Scale) I MOTOR PULL- ...