SI9910DY-T1-E3 Vishay, SI9910DY-T1-E3 Datasheet - Page 2

IC MOSFET DVR ADAPTIVE PWR 8SOIC

SI9910DY-T1-E3

Manufacturer Part Number
SI9910DY-T1-E3
Description
IC MOSFET DVR ADAPTIVE PWR 8SOIC
Manufacturer
Vishay
Type
High Sider
Datasheets

Specifications of SI9910DY-T1-E3

Configuration
High-Side
Input Type
Non-Inverting
Delay Time
120ns
Current - Peak
1A
Number Of Configurations
1
Number Of Outputs
1
High Side Voltage - Max (bootstrap)
500V
Voltage - Supply
10.8 V ~ 16.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rise Time
50 ns
Fall Time
35 ns
Supply Voltage (min)
10.8 V
Supply Current
0.5 mA
Maximum Power Dissipation
700 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Device Type
MOSFET
Peak Output Current
1A
Input Delay
120ns
Output Delay
135ns
Supply Voltage Range
10.8V To 16.5V
Driver Case Style
SOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI9910DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9910DY-T1-E3
Manufacturer:
TI
Quantity:
87
Part Number:
SI9910DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI9910DY-T1-E3
Quantity:
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Si9910
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V
V
Pin 1, 4, 5, 7, 8
Pin 2
Input Current
Peak Current (I
Storage Temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS
Input
High Level Input Voltage
Low Level Input Voltage
Input Voltage Hysteresis
High Level Input Current
Low Level Input Current
Output
High Level Output Voltage
Low Level Output Voltage
Undervoltage Lockout
I
Voltage Drain-Source Maximum
Input Current for V
Peak Output Source Current
Peak Output Sink Current
Supply
Supply Range
Supply Current
Supply Current
Dynamic
Propagation Delay Time Low to High Level
Propagation Delay Time High to Low Level
Rise Time
Fall Time
Overcurrent Sense Delay (V
Input Capacitance
DD
SENSE
Refer to PROCESS OPTION FLOWCHART for additional information.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
Supply Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Threshold
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
pk
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input
SS
Pin
DS
a
)
−0.3 V to V
−0.7 V to V
Symbol
V
I
I
I
V
V
V
I
I
t
t
V
UVLO
V
V
V
VDS
OS+
OS−
DD1
DD2
PLH
PHL
t
C
V
I
I
DS
IH
OH
t
IL
OL
TH
DS
DD
t
IH
IL
r
f
in
h
−0.3 V to 18 V
−65 to 150_C
DD
DD
"20 mA
+ 0.3 V
+ 0.3 V
Unless Otherwise Specified
Unless Otherwise Specified
T
1 A
A
= OperatingTemperature Range
Max I
100 mV Change on Drain
Test Conditions
Output High, No Load
Output Low, No Load
V
DD
I
S
OH
I
C
C
OL
10.8 V to 16.5 V
= 2 mA, Input High
V
Input High
L
L
V
IN
= −200 mA
= 2000 pF
= 2000 pF
IN
= 200 mA
Operating Temperature
Junction Temperature (T
Power Dissipation (Package)
8-Pin SOIC (Y Suffix)
8-Pin Plastic DIP (J Suffix)
Notes
a.
b.
= V
= 0 V
Device mounted with all leads soldered or welded to PC board.
Derate 5.6 mW/_C above 25_C.
DD
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
)
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.70 x V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
a
V
Min
0.90
DD
10.8
8.3
0.5
8.3
−3
c
DD
Limits
Typ
10.7
0.66
100
120
135
7.4
6.0
2.0
1.3
9.2
9.1
0.1
12
−1
50
35
1
1
5
b
S-42043—Rev. H, 15-Nov-04
Document Number: 70009
0.35 x V
Max
10.6
10.2
20.0
16.5
500
"1
"1
3.0
0.8
3
1
c
DD
−40 to 85_C
700 mW
700 mW
150_C
Unit
mA
mA
mA
mA
mA
mS
pF
ns
ns
V
V
V
A
V

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