IX6R11S3T/R IXYS, IX6R11S3T/R Datasheet

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IX6R11S3T/R

Manufacturer Part Number
IX6R11S3T/R
Description
IC DRVR HALF BRIDGE 4A 16-SOIC
Manufacturer
IXYS
Type
High Side/Low Sider
Datasheet

Specifications of IX6R11S3T/R

Configuration
Half Bridge
Input Type
Non-Inverting
Delay Time
120ns
Current - Peak
6A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 35 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SOIC
Rise Time
35 ns
Fall Time
25 ns
Supply Voltage (min)
10 V
Maximum Power Dissipation
1250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
For Use With
EV6R11S3 - BOARD EVALUATION IX6R11S3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
*Operational voltage rating of 600V determined in a typical half-bridge circuit configuration (refer to Figure 10 and Figure 11).
© 2007 IXYS CORPORATION All rights reserved
Operational voltage in other circuit configurations may vary.
Figure 1. Typical Circuit Connection
Features
• Floating High Side Driver with boot-strap Power
• Fully operational to 600V
• ± 50V/ns dV/dt immunity
• Gate drive power supply range: 10 - 35V
• Undervoltage lockout for both output drivers
• Separate Logic power supply range: 3.3V to V
• Built using the advantages and compatibility
• Latch-Up protected over entire
• High peak output current: 6A
• Low output impedance
• Low power supply current
• Immune to negative voltage transients
Applications
• Driving MOSFETs and IGBTs in half-bridge circuits
• High voltage, high side and low side drivers
• Motor Controls
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Class D Switching Amplifiers
operating range
supply along with a Low Side Driver.
of CMOS and IXYS HDMOS
600 Volt, 6 Ampere High & Low-side Driver
TM
for N-Channel MOSFETs and IGBTs
processes
IX6R11
CL
General Description
The IX6R11 Bridge Driver for N-channel MOSFETs and
IGBTs with a high side and low side output, whose input
signals reference the low side. The High Side driver can
control a MOSFET or IGBT connected to a positive bus
voltage up to 600V. The logic input stages are
compatible with TTL or CMOS, have built-in hysteresis
and are fully immune to latch up over the entire
operating range. The IX6R11 can withstand dV/dt on the
output side up to ± 50V/ns.
Ordering Information
The IX6R11 is available in the 14-Pin DIP, the 16-Pin
SOIC, and the heat-sinkable 18-Pin SOIC Cooltab
packages.
Precaution: when performing the High-Voltage tests,
Warning: The IX6R11 is ESD Sensitive
adequate safety precautions should be taken!
Part Number
IX6R11P7
IX6R11S3
IX6R11S6
Up to 600V
18-Pin SOIC
16-Pin SOIC
Package Type
14-Pin DIP
DS99037G(10/07)
TM

Related parts for IX6R11S3T/R

IX6R11S3T/R Summary of contents

Page 1

... Class D Switching Amplifiers *Operational voltage rating of 600V determined in a typical half-bridge circuit configuration (refer to Figure 10 and Figure 11). Operational voltage in other circuit configurations may vary. Figure 1. Typical Circuit Connection © 2007 IXYS CORPORATION All rights reserved IX6R11 for N-Channel MOSFETs and IGBTs General Description ...

Page 2

... HIN ENB N LIN VCL LGO 14 1 Cooltab is a trademark of IXYS Corporation IXYS reserves the right to change limits, test conditions, and dimensions. VDD Low to High OUT HIN RST HIN IN UVCC DG Detect Low to High Side Delay Equalizer and Shutdown Shutdown Logic UVCC Detect DG 1 Ω ...

Page 3

... Low side fixed supply voltage CL V Low side output voltage LGO V Logic supply voltage DD V Logic supply offset voltage DG V Logic input voltage(HIN, LIN, ENbar Ambient Temperature A © 2007 IXYS CORPORATION All rights reserved Min -0.3 -200 V -0.3 HS -0.3 -0.3 -0 -0.3 LS ≤ 25C A ≤ ...

Page 4

... Output high short circuit current Output low short circuit current These characteristics are guaranteed by design only. Tested on a sample basis. IXYS reserves the right to change limits, test conditions, and dimensions unless otherwise specified. The dynamic electrical characteristics are DG LS Test Conditions ...

Page 5

... HGO/LGO Figure 5. Definitions of Switching Time Waveforms VCL=15V 10 0 HIN IX6R11 11 ENB 1 12 LIN 13 2 Figure 7. Switching Time Test Circuit © 2007 IXYS CORPORATION All rights reserved 50% HIN LIN tdoff tf 90% 10% Figure 6. Definitions of Delay Matching Waveforms VCH + 0 VHS 600V) uF HGO LGO CL Figure 8. Device operating range: Buss voltage vs. Frequency Tested in typical circuit configuration (refer to Figure 10 & ...

Page 6

... HIN HIN 15 1k ENB ENB 1k 16 LIN LIN 1uF/35V MLCC 10uF/35V Figure 10. Test circuit for high frequency, 750kHz, operation. IXYS reserves the right to change limits, test conditions, and dimensions 10uF C5 IX6R11 0.1uF HS VCH HGO HS GND2 VDD HIN ENB LS LIN VCL C6 DG ...

Page 7

... 1uF/35V MLCC 1uF/35V MLCC 12 10uF/35V HIN 15 1k ENB 1k 16 LIN 1uF/35V MLCC 10uF/35V Figure 11. Test circuit for low frequency, 75kHz, operation. © 2007 IXYS CORPORATION All rights reserved VIN VOUT- VOUT- 14 VOUT+ VOUT+ GND HGO HIN ENB 3 LIN LGO 15V DD CH ...

Page 8

... Typ. t off Supply Voltage- Volts DD Fig. 14a. Low side turn-on and turn-off delay times vs. V supply voltage. DD IXYS reserves the right to change limits, test conditions, and dimensions. Max Typ 100 125 Typ Typ. t off Fig. 13b. High side turn-on and turn-off delay times vs Max ...

Page 9

... Max. Low side 15 Typ. Low side Supply Voltage - Volts CL CH Fig. 16b. Turn-on rise times vs. bias supply voltages. © 2007 IXYS CORPORATION All rights reserved 75 100 125 Fig.15b. High and Low side ENABLE (Shutdown) times Fig. 16a. Turn-on and turn-off rise times vs. temperature Fig ...

Page 10

... Maximum Typical -50 - Temperature - Degrees C Fig. 21a. Output source current vs. temperature IXYS reserves the right to change limits, test conditions, and dimensions 15V Fig. 18. Offset supply leakage current vs. temperature. Maximum Typical Fig. 20. IX6R11S3 Case temperature rise vs. operating 50 75 100 125 300 275 ...

Page 11

... Undervoltage positive trip vs. temperature Max 10 Typ Min 6 5 -50 - Temperature - Fig. 24a. V Undervoltage positive trip vs. temperature. CL © 2007 IXYS CORPORATION All rights reserved 75 100 125 o C Fig. 22b. Output sink current vs. bias voltage 75 100 125 o C Fig. 23b 100 125 o C Fig. 24b ...

Page 12

... Frequency - kHz Fig. 27b. Case temperature rise vs. switching frequency for IX6R11S6 IXYS reserves the right to change limits, test conditions, and dimensions 100 125 o C Fig. 25b. Quiescent current vs. voltage for the high side ...

Page 13

... IXYS CORPORATION All rights reserved 45%% 45° IX6R11 ...

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