IX6R11S3T/R IXYS, IX6R11S3T/R Datasheet - Page 5

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IX6R11S3T/R

Manufacturer Part Number
IX6R11S3T/R
Description
IC DRVR HALF BRIDGE 4A 16-SOIC
Manufacturer
IXYS
Type
High Side/Low Sider
Datasheet

Specifications of IX6R11S3T/R

Configuration
Half Bridge
Input Type
Non-Inverting
Delay Time
120ns
Current - Peak
6A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 35 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SOIC
Rise Time
35 ns
Fall Time
25 ns
Supply Voltage (min)
10 V
Maximum Power Dissipation
1250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
For Use With
EV6R11S3 - BOARD EVALUATION IX6R11S3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HGO/LGO
ENB
HIN
LIN
© 2007 IXYS CORPORATION All rights reserved
HIN/LIN
LGO/HGO
Figure 5. Definitions of Switching Time Waveforms
10
HIN/LIN
uF
ENB
Figure 3. INPUT/OUPUT Timing Diagram
Figure 7. Switching Time Test Circuit
tdon
uF
0.1
VCL=15V
10
11
13
12
9
50%
2
IX6R11
3
10%
tr
90%
6
5
7
1
50%
CL
0.1
tdoff
uF
CL
90%
HGO
LGO
10
uF
10%
10
uF
tf
(0 to 600V)
VCH
VHS
+
-
Figure 8. Device operating range: Buss voltage vs. Frequency
Tested in typical circuit configuration (refer to Figure 10 & 11)
HIN
LIN
Figure 6. Definitions of Delay Matching Waveforms
LGO
600V
500V
400V
Figure 4. ENABLE Waveform Definitions
tdm
50%
0
~ ~
ENB
LGO/HGO
Input Signal
10%
HGO
Outgoing Signal
200kHz
t
50%
enb
f
10%
PWM
50%
90%
tdm
500kHz
LGO
IX6R11
1MHz
~ ~
HGO

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