L6390D STMicroelectronics, L6390D Datasheet - Page 17

• Manufacturer Part Number: L6390D
• Description: IC DRIVER HV HI/LOW SIDE SOIC-16
• Manufacturer: STMicroelectronics
• Type: High Side/Low Sider

Specifications of L6390D

• Configuration: Half Bridge
• Input Type: Inverting and Non-Inverting
• Delay Time: 125ns
• Current - Peak: 290mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 12.5 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Product: H-Bridge Drivers
• Rise Time: 120 ns
• Fall Time: 70 ns
• Supply Voltage (min): 12.5 V
• Supply Current: 290 mA
• Maximum Power Dissipation: 800 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• For Use With: 497-10543 - BOARD EVAL L6390/STD5N52U497-8404 - BOARD EVAL L6390/STD5NK52ZD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

L6390
9
9.1
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with diode in series, as shown in
8.b. An internal charge pump
C
To choose the proper C
capacitor. This capacitor C
Equation 1
The ratio between the capacitors C
It has to be:
Equation 2
e.g.: if Q
300 mV.
If HVG has to be supplied for a long time, the C
the leakage and quiescent losses.
e.g.: HVG steady state consumption is lower than 200 μA, so if HVG T
to supply 1 μC to C
The internal bootstrap driver gives a great advantage: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if V
LVG is on. The charging time (T
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS R
120 Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
BOOT
gate
selection and charging
is 30 nC and V
EXT
. This charge on a 1 μF capacitor means a voltage drop of 1V.
BOOT
EXT
gate
value the external MOS can be seen as an equivalent
(Figure
Doc ID 14493 Rev 5
is related to the MOS total gate charge:
is 10 V, C
charge
OUT
EXT
is close to GND (or lower) and in the meanwhile the
C
) of the C
C
8.b) provides the DMOS driving voltage.
and C
BOOT
EXT
EXT
is 3 nF. With C
BOOT
>>> C
=
BOOT
BOOT
Q
------------- -
V
gate
gate
is proportional to the cyclical voltage loss.
EXT
is the time in which both conditions are
(Figure
selection has to take into account also
BOOT
8.a). In the L6390 a patented
= 100 nF the drop would be
DSon
ON
(typical value:
is 5 ms, C
Bootstrap driver
BOOT
Figure
17/22
has