MCP1416T-E/OT Microchip Technology, MCP1416T-E/OT Datasheet - Page 11

IC MOSFET DVR 1.5A HS TSOT23-5

MCP1416T-E/OT

Manufacturer Part Number
MCP1416T-E/OT
Description
IC MOSFET DVR 1.5A HS TSOT23-5
Manufacturer
Microchip Technology
Type
Low Sider
Datasheets

Specifications of MCP1416T-E/OT

Number Of Outputs
1
Input Type
Non-Inverting
On-state Resistance
6 Ohm
Current - Peak Output
1.5A
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Rise Time
25 ns
Fall Time
25 ns
Supply Voltage (min)
4.5 V
Supply Current
1.1 mA
Maximum Power Dissipation
390 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MCP1416T-E/OT
MCP1416T-E/OTTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP1416T-E/OT
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
MCP1416T-E/OT
0
4.0
4.1
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1415/16 family can be
used
capability.
4.2
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (t
delays (t
can typically charge and discharge a 1000 pF load
capacitance in 20 ns along with a typical turn on (t
propagation delay of 41 ns.
show the test circuit and timing waveform used to verify
the MCP1415/16 timing.
FIGURE 4-1:
Waveform.
© 2008 Microchip Technology Inc.
Output
Input
+5V
18V
0V
0V
to
Input
D1
APPLICATION INFORMATION
General Information
MOSFET Driver Timing
10%
and t
provide
90%
D2
). The MCP1415/16 family of drivers
V
t
MCP1415
D1
R
10%
DD
), fall time (t
additional
= 18V
Inverting Driver Timing
t
F
1 µF
Figure 4-1
source/sink
F
), and propagation
C
L
t
Output
0.1 µF
Ceramic
= 1000 pF
D2
90%
and
t
10%
R
Figure 4-2
current
90%
D1
)
FIGURE 4-2:
Waveform.
4.3
Careful layout and decoupling capacitors are required
when using power MOSFET drivers. Large current are
required to charge and discharge capacitive loads
quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor is recommended to be placed in
parallel between the driver V
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 2 and 4 is required for reliable
operation. These capacitors should be placed close to
the driver to minimize circuit board parasitics and
provide a local source for the required current.
Output
Input
+5V
18V
0V
0V
Input
Decoupling Capacitors
10%
t
D1
V
MCP1416
DD
90%
MCP1415/16
= 18V
Non-Inverting Driver Timing
10%
1 µF
DD
t
R
and GND. A 1.0 µF low
C
DS22092C-page 11
L
Output
0.1 µF
Ceramic
= 1000 pF
t
90%
D2
10%
90%
t
F

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