BSP76 E6327 Infineon Technologies, BSP76 E6327 Datasheet - Page 8

MOSFET 42V 1.4A N-CHAN SOT223

BSP76 E6327

Manufacturer Part Number
BSP76 E6327
Description
MOSFET 42V 1.4A N-CHAN SOT223
Manufacturer
Infineon Technologies
Series
HITFET®r
Type
Low Sider
Datasheet

Specifications of BSP76 E6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
150 mOhm
Current - Output / Channel
1.8A
Current - Peak Output
7.5A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
On Resistance (max)
0.19 Ohms
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Maximum Power Dissipation
3800 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSP76-E6327
BSP76-E6327INTR
BSP76-E6327INTR
BSP76E6327INTR
BSP76E6327NT
BSP76E6327NTINTR
BSP76E6327NTINTR
BSP76E6327T
BSP76E6327T
BSP76E6327TINTR
BSP76E6327TINTR
BSP76E6327XT
SP000011146
SP000292889
SP000379611
Datasheet
9 Typ. overload current
I
Parameter: T
11 Determination of I
I
Parameter: T
D(lim)
D(lim)
A
A
12
12
8
6
4
2
0
8
6
4
2
0
= f(t), V
= f(t); t
0
0
25°C
-40°C
85°C
0.5
150°C
0.1
jstart
Jstart
m
bb
1
= 200µs
=12 V, no heatsink
0.2
1.5
D(lim)
2
0.3
2.5
150°C
0.4
3
ms
ms
t
t
-40°C
25°C
85°C
0.55
4
8
10 Typ. transient thermal impedance
Z
Parameter: D=t
thJA
K/W
10
10
10
10
10
=f(t
-1
-2
2
1
0
10
D=0.5
-7
p
0.05
0.02
0.01
10
0.2
0.1
) @ 6 cm
-6
Smart Low Side Power Switch
10
Single pulse
-5
p
10
/T
-4
10
2
-3
cooling area
10
-2
10
Rev. 1.3, 2008-04-14
-1
HITFET BSP 76
10
0
10
1
10
2
t
p
s
10
4

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