VND1NV0413TR STMicroelectronics, VND1NV0413TR Datasheet - Page 12

• Manufacturer Part Number: VND1NV0413TR
• Description: MOSFET POWER OMNIFET II DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND1NV0413TR

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Switch Type: Low Side
• Power Switch Family: VND1NV04
• Power Switch On Resistance: 250mOhm
• Output Current: 1.7A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: TO-252
• Pin Count: 2 +Tab
• Power Dissipation: 35W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Not Compliant

Electrical specifications
2.4
12/33
Figure 9.
Figure 11. Derating curve
Figure 13. Static drain-source on resistance
Vsd (mV)
1000
950
900
850
800
750
700
Rds(on) (mohms)
500
450
400
350
300
250
200
150
100
50
0
0
3
Tj=150ºC
Tj=-40ºC
Tj=25ºC
Electrical characteristics curves
Source-drain diode forward
characteristics
vs. input voltage (part 2/2)
3.5
2
Vin=0V
4
4
4.5
6
Id (A)
Vin(V)
8
5
5.5
10
12
6
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Id=1.5A
Id=1A
6.5
14
Doc ID 7381 Rev 2
Figure 10. Static drain-source on resistance
Figure 12. Static drain-source on resistance
Figure 14. Transconductance
Rds(on) (mohms)
500
450
400
350
300
250
200
150
100
Rds(on) (ohms)
4.5
3.5
2.5
1.5
0.5
50
Gfs (S)
5.5
4.5
3.5
2.5
1.5
0.5
4
3
2
0
1
0
6
5
4
3
2
0
1
0
3
0
VND1NV04 - VNN1NV04 - VNS1NV04
vs. input voltage (part 1/2)
3.5
0.25
0.05
Vin=2.5V
Vds=13V
4
0.5
0.1
4.5
0.75
Tj=-40ºC
Vin(V)
Id(A)
0.15
Id(A)
5
1
5.5
1.25
0.2
Id=0.5A
6
1.5
Tj=150ºC
Tj=-40ºC
Tj=25ºC
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0.25
6.5
Tj=25ºC
Tj=150ºC
1.75
0.3
7
2