VN5050J-E STMicroelectronics, VN5050J-E Datasheet - Page 14

IC DRVR HIGHSIDE AUTO PWRSSO-12

VN5050J-E

Manufacturer Part Number
VN5050J-E
Description
IC DRVR HIGHSIDE AUTO PWRSSO-12
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VN5050J-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
50 mOhm
Current - Peak Output
19A
Voltage - Supply
4.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSSO-12
Product
Driver ICs - Various
Supply Voltage (max)
36 V
Supply Voltage (min)
4.5 V
Supply Current
0.005 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
35000 ns
Maximum Turn-on Delay Time
20000 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Device Type
High Side
Module Configuration
High Side
Peak Output Current
19A
Output Resistance
0.065ohm
Input Delay
20µs
Output Delay
35µs
Supply Voltage Range
4.5V To 36V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VN5050J-E
Manufacturer:
ST
Quantity:
20 000
Electrical specifications
14/31
Table 13.
(1) The above test levels must be considered referred to V
(2) Valid in case of external load dump clamp: 40V maximum referred to ground.
ISO 7637-2:
Test pulse
ISO 7637-2:
Test pulse
2004(E)
2004(E)
5b
Class
5b
2a
3a
3b
1
4
2a
3a
3b
C
(2)
1
4
E
(2)
Electrical transient requirements
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
-100V
+37V
+75V
+65V
-75V
-6V
III
Test levels
+100V
-100V
-150V
+50V
+87V
-7V
IV
III
C
C
C
C
C
C
5000 pulses
5000 pulses
Number of
test times
pulses or
1 pulse
1 pulse
Test level results
1h
1h
CC
Contents
= 13.5V except for pulse 5b.
90 ms
90 ms
0.5 s
0.2 s
Burst cycle/pulse
repetition time
(1)
100 ms
100 ms
5 s
5 s
IV
C
C
C
C
C
C
Delays and
Impedance
0.1 µs, 50 Ω
0.1 µs, 50 Ω
400 ms, 2 Ω
VN5050J-E
2 ms, 10 Ω
50 µs, 2 Ω
100 ms,
0.01Ω

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