VN5050J-E STMicroelectronics, VN5050J-E Datasheet - Page 20

• Manufacturer Part Number: VN5050J-E
• Description: IC DRVR HIGHSIDE AUTO PWRSSO-12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5050J-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 50 mOhm
• Current - Peak Output: 19A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Product: Driver ICs - Various
• Supply Voltage (max): 36 V
• Supply Voltage (min): 4.5 V
• Supply Current: 0.005 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 35000 ns
• Maximum Turn-on Delay Time: 20000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 19A
• Output Resistance: 0.065ohm
• Input Delay: 20µs
• Output Delay: 35µs
• Supply Voltage Range: 4.5V To 36V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application information
3
3.1
3.1.1
20/31
Application information
Figure 27. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
D
GND
= (-V
R
R
will produce a shift (I
GND
GND
CC
GND
+5V
µC
)
≤ 600mV / (I
≥ (− V
2
/R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
) / (-I
R
R
R
prot
prot
prot
S(on)max
GND
GND
S(on)max
+5V
)
(when V
).
STATUS
STAT_DIS
INPUT
* R
CC
GND
<0: during reverse battery situations) is:
GND
.
) in the input thresholds and the status output
V
GND
GND
R
GND
GND
GND
S(on)max
only)
V
CC
resistor.
D
GND
becomes the sum of the
OUTPUT
VN5050J-E
D
ld