VN820PT-E STMicroelectronics, VN820PT-E Datasheet - Page 18

IC DRIVER HIGH SIDE 9A PPAK

VN820PT-E

Manufacturer Part Number
VN820PT-E
Description
IC DRIVER HIGH SIDE 9A PPAK
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VN820PT-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
40 mOhm
Current - Output / Channel
9A
Voltage - Supply
5.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PPAK (4 leads + tab)
Supply Voltage (min)
5.5 V
Supply Current
3.5 mA
Maximum Power Dissipation
65800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
30000 ns
Maximum Turn-on Delay Time
30000 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Device Type
High Side
Module Configuration
High Side
Peak Output Current
9A
Output Resistance
0.04ohm
Input Delay
30µs
Output Delay
30µs
Supply Voltage Range
5.5V To 36V
Driver Case Style
PPAK
Rohs Compliant
Yes
Driver Configuration
Non-Inverting
Driver Type
High Side
Input Logic Level
CMOS
Operating Supply Voltage (max)
36V
Power Dissipation
65.8W
Operating Supply Voltage (min)
5.5V
Operating Supply Voltage (typ)
13V
Turn Off Delay Time
30us
Turn On Delay Time (max)
30us
Operating Temp Range
-40C to 150C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
4 +Tab
Package Type
PPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Peak Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number:
VN820PT-E
Manufacturer:
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0
Application information
3
3.1
3.1.1
18/44
Application information
Figure 24. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where - I
maximum rating section of the device datasheet.
Power Dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift varies depending on how many devices are ON in the case of several
high-side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
D
GND
= (- V
R
R
produces a shift (I
GND
GND
+5V
C
CC
GND
)
2
/ R
600 mV / (I
is the DC reverse ground pin current and can be found in the absolute
- V
GND
CC
R
R
prot
prot
) / (- I
GND
+5V
S(on)max
S(on)max
GND
(when V
)
STATUS
INPUT
Doc ID 10890 Rev 6
).
* R
CC
GND
GND
< 0: during reverse battery situations) is:
) in the input thresholds and the status output
.
V
GND
R
GND
GND
GND
GND
S(on)max
only)
V
CC
resistor.
D
GND
becomes the sum of the
OUTPUT
VN820-E
D
ld

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