VNP20N07-E STMicroelectronics, VNP20N07-E Datasheet

MOSFET OMNIFET 70V 20A TO-220

VNP20N07-E

Manufacturer Part Number
VNP20N07-E
Description
MOSFET OMNIFET 70V 20A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNP20N07-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
50 mOhm
Current - Peak Output
20A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNP20N07-E
Manufacturer:
INTERSIL
Quantity:
6 000
Part Number:
VNP20N07-E
Manufacturer:
ST
0
Company:
Part Number:
VNP20N07-E
Quantity:
1 600
DESCRIPTION
The VNP20N07 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
BLOCK DIAGRAM
March 2004
VNP20N07
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-220 PACKAGE
TYPE
V
70 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
R
0.05
DS(on)
20 A
I
lim
tation and overvoltage clamp protect the chip
in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TO-220
VNP20N07
"OMNIFET":
1
2
3
1/11

Related parts for VNP20N07-E

VNP20N07-E Summary of contents

Page 1

... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION The VNP20N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS KHz applications. Built-in thermal shut-down, linear current limi- BLOCK DIAGRAM ...

Page 2

... VNP20N07 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Drain Current D I Reverse DC Output Current R V Electrostatic Discharge (C= 100 pF, R=1 esd P Total Dissipation at T tot T Operating Junction Temperature j T Case Operating Temperature c T Storage Temperature stg THERMAL DATA R Thermal Resistance Junction-case ...

Page 3

... D in Test Conditions di/dt = 100 (see test circuit, figure 5) Test Conditions starting gen VNP20N07 Min. Typ. Max. Unit 90 180 ns 240 400 ns 430 800 ns 150 300 ns 800 1200 ns 1.5 2 3.5 5 Min. Typ. Max. Unit 1.6 V 165 ns 0.55 C 6.5 A Min. Typ. Max. Unit ...

Page 4

... VNP20N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from KHz. The only difference from the user’s standpoint is that a small DC ...

Page 5

... Thermal Impedance Output Characteristics Static Drain-Source On Resistance vs Input Voltage Derating Curve Transconductance Static Drain-Source On Resistance VNP20N07 5/11 ...

Page 6

... VNP20N07 Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 6/11 Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature ...

Page 7

... Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load VNP20N07 7/11 ...

Page 8

... VNP20N07 Switching Time Resistive Load Step Response Current Limit 8/11 Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit Fig. 6: Waveforms VNP20N07 9/11 ...

Page 10

... VNP20N07 DIM L20 L30 P Q Package Weight 10/11 TO-220 MECHANICAL DATA mm. MIN. TYP 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2 ...

Page 11

... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com VNP20N07 11/11 ...

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