VNP20N07-E STMicroelectronics, VNP20N07-E Datasheet - Page 3
![MOSFET OMNIFET 70V 20A TO-220](/photos/1/39/13943/to-220_sml.jpg)
VNP20N07-E
Manufacturer Part Number
VNP20N07-E
Description
MOSFET OMNIFET 70V 20A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet
1.VNP20N07-E.pdf
(11 pages)
Specifications of VNP20N07-E
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
50 mOhm
Current - Peak Output
20A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VNP20N07-E
Manufacturer:
INTERSIL
Quantity:
6 000
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ( )
SOURCE DRAIN DIODE
PROTECTION
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Parameters guaranteed by design/characterization
I
Symbol
Symbol
Symbol
(di/dt)
t
T
V
T
E
RRM
Q
dlim
I
t
t
t
t
t
jsh
gf
rr
jrs
SD
as
d(off)
d(off)
rr
d(on)
d(on)
I
Q
(
(
lim
t
t
t
t
(
(
(
(
r
f
r
f
(
(
i
( )
on
)
)
)
)
)
)
)
)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Drain Current Limit
Step Response
Current Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
V
V
(see figure 3)
V
V
(see figure 3)
V
V
V
I
I
V
(see test circuit, figure 5)
V
V
V
V
V
starting T
V
V
SD
SD
DD
gen
DD
gen
DD
in
DD
DD
in
in
in
in
in
in
in
= 10 A
= 10 V
= 10 A
= 10 V
= 5 V
= 10 V
= 5 V
= 10 V
= 5 V
= 10 V R
= 15 V
= 15 V
= 15 V
= 12 V
= 30 V
= 10 V
= 10 V
j
Test Conditions
Test Conditions
Test Conditions
= 25
V
V
V
gen
I
di/dt = 100 A/ s
DS
D
in
T
DS
R
I
D
j
o
R
R
= 10 A
I
I
gen
= 0
C
= 25
d
d
= 13 V
= 1 K
= 13 V
= 10 A
gen
gen
= 10 A
= 10 A
= 10
= 10
= 1000
V
o
C
DD
V
= 20 V
L = 10 mH
in
= 10 V
Min.
Min.
Min.
0.95
150
135
14
14
Typ.
Typ.
0.55
Typ.
240
430
150
800
165
1.5
3.5
6.5
90
60
60
20
20
29
70
50
20
6
Max.
1200
Max.
Max.
180
400
800
300
140
2.2
5.5
1.6
10
28
28
60
VNP20N07
Unit
A/ s
Unit
Unit
mA
mA
nC
ns
ns
ns
ns
ns
ns
o
o
V
A
A
A
J
C
C
C
s
s
s
s
s
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