VND810MSP STMicroelectronics, VND810MSP Datasheet - Page 16

• Manufacturer Part Number: VND810MSP
• Description: IC DRVR HISIDE 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND810MSP

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 150 mOhm
• Current - Peak Output: 900mA
• Voltage - Supply: 5.5 V ~ 36 V
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Supply Voltage (min): 5.5 V
• Supply Current: 40 mA
• Maximum Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application information
3
3.1
3.1.1
16/27
Application information
Figure 24. Application schematic
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.
2.
where - I
maximum rating section of the device datasheet.
Power dissipation in R
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
R
R
P
D
+5V
GND
GND
C
= ( - V
GND
600mV / 2 (I
is the DC reverse ground pin current and can be found in the absolute
CC
- V
R
R
R
R
prot
prot
prot
prot
)
CC
2
/ R
+5V
) / ( - I
GND
GND
+5V
S(on)max
GND
(when V
STATUS1
INPUT1
STATUS2
INPUT2
)
)
CC
< 0 during reverse battery situations) is:
V
GND
GND
resistor:
R
GND
GND
GND
V
S(on)max
CC
D
only)
GND
OUTPUT2
OUTPUT1
becomes the sum of the
VND810MSP
D
ld