VND810-E STMicroelectronics, VND810-E Datasheet
VND810-E
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VND810-E Summary of contents
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... VERY LOW STAND-BY CURRENT REVERSE BATTERY PROTECTION (**) IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION The VND810 monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V pin voltage clamp protects the device ...
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... VND810-E Figure 2. Block Diagram V cc CLAMP GND INPUT1 STATUS1 LOGIC OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP. 2 Table 3. Absolute Maximum Ratings Symbol DC Supply Voltage Reverse DC Supply Voltage Reverse Ground Pin Current GND I DC Output Current OUT - I Reverse DC Output Current OUT I DC Input Current Status Current ...
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... IN2 INPUT 2 I STAT2 OUTPUT 2 STATUS 2 GND I GND Parameter (at least 35 m thick) connected to all (at least 35 m thick) connected to all OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT Input X Through 10K resistor (*) OUT1 V OUT1 I OUT2 V OUT2 Value 15 ( VND810-E Unit °C/W (2) °C/W pins. Horizontal CC pins. Horizontal CC 3/20 ...
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... VND810-E ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C < T <150°C, unless otherwise specified (Per each channel) Table 5. Power Output Symbol Parameter V (**) Operating Supply Voltage CC V (**) Undervoltage Shut-down USD V (**) Overvoltage Shut-down State Resistance ON I (**) Supply Current S I Off State Output Current L(off1) I Off State Output Current ...
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... V =10.4V OUT R =13 from V =11. OUT V =1.3V OUT Test Conditions V = =0A OUT V =0V IN Test Conditions V = 1.25V 3.25V 1mA -1mA IN VND810-E Min Typ Max Unit 0 100 -0.7 V Min Typ Max Unit See relative V/ s diagram See relative V/ s diagram Min Typ ...
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... VND810-E Figure 5. OPEN LOAD STATUS TIMING (with external pull-up) V OUT V INn V STAT n t DOL(off) Table 12. Truth Table CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > Output Current < 6/20 I < I > V OUT DOL(on) INPUT OVERTEMP STATUS TIMING T > TSD INn ...
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... Pin CC TEST LEVELS II III -50 V -75 V +50 V +75 V -50 V -100 V + +46.5 V +66.5 V TEST LEVELS RESULTS CONTENTS VND810-E 90% dV /dt OUT (off Delays and Impedance -100 +100 V 0 -150 V 0 +100 V 0 100 ms, 0.01 +86.5 V 400 ms, 2 III ...
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... VND810-E Figure 7. Waveforms INPUT n OUTPUT VOLTAGE STATUS INPUT n OUTPUT VOLTAGE STATUS INPUT n OUTPUT VOLTAGE STATUS n INPUT n OUTPUT VOLTAGE STATUS n INPUT n OUTPUT VOLTAGE STATUS INPUT n OUTPUT CURRENT STATUS n 8/20 NORMAL OPERATION n UNDERVOLTAGE V USDhyst V USD n undefined OVERVOLTAGE V >V V < OPEN LOAD with external pull-up V > ...
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... LOAD DUMP PROTECTION D is necessary (Voltage Transient Suppressor) if the will ld GND load dump peak voltage exceeds V The same applies if the device will be subject to transients on the V . GND shown in the ISO T/R 7637/1 table. VND810 OUTPUT1 OUTPUT2 D GND ) in the ground line. GND =1k should be inserted in parallel to ...
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... VND810-E C I/Os PROTECTION ground protection network is used and negative transient are present on the V line, the control pins will CC be pulled negative. ST suggests to insert a resistor (R in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os ...
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... Figure 15. Status Clamp Voltage Vscl (V) 8 7.8 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 100 125 150 175 Vin=3.25V -50 - 100 125 Tc (°C) Vstat=5V 0 -50 - 100 125 Tc (°C) Istat=1mA -50 - 100 125 Tc (°C) VND810-E 150 175 150 175 150 175 11/20 ...
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... VND810-E Figure 16. On State Resistance Vs T Ron (mOhm) 400 350 Iout=0.5A 300 Vcc=8V; 13V & 36V 250 200 150 100 50 0 -50 - (°C) Figure 17. Openload On State Detection Threshold Iol (mA Vcc=13V 50 Vin= -50 - (°C) Figure 18. Input High Level Vih (V) 3.6 3.4 3.2 3 2.8 2.6 2 ...
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... Figure 26. Turn-off Voltage Slope dVout/dt(off) (V/ms) 500 450 400 350 300 250 200 150 100 50 0 100 125 150 175 100 125 150 175 -50 - 100 125 Tc (°C) Vcc=13V Rl=13Ohm -50 - 100 125 Tc (ºC) VND810-E 150 175 150 175 13/20 ...
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... VND810-E Figure 27. Maximum turn off current versus load inductance I LMAX ( 0 Single Pulse at T =150ºC Jstart B= Repetitive pulse at T =100ºC Jstart C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13. Demagnetization 14/ L(mH) Values are generated with R In case of repetitive pulses, T each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C ...
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... PowerSO-10™ Thermal Data Figure 28. SO-16 PC Board Layout condition of R and thickness=35 m, Copper areas: 0.26cm Figure 29 PCB copper area in open box free air condition thj-amb RTH j-am b (°C/ measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=1.6mm 4cm ). 1 2 PCB Cu heatsink area (cm ^2) VND810 15/20 ...
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... VND810-E Figure 30. SO-16 Thermal Impedance Junction Ambient Single Pulse ZTH (°C/W) 1000 100 10 1 0.1 0.01 0.0001 0.001 Figure 31. Thermal fitting model of a double channel HSD in SO-16 Tj_1 Pd1 C1 C2 Tj_2 R1 R2 Pd2 T_amb 16/20 0.01 0.1 1 Time (s) Pulse calculation formula ...
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... PACKAGE MECHANICAL Table 15. SO-16 Mechanical Data Symbol Figure 32. SO-16 Package Dimensions millimeters Min Typ 0.1 0.35 0.19 0.5 45° (typ.) 9.8 5.8 1.27 8.89 3.8 4.6 0.5 8° (max.) VND810-E Max 1.75 0.2 1.65 0.46 0..25 10 6.2 4.0 5.3 1.27 0.62 17/20 ...
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... VND810-E Figure 33. Suggested Pad Layout And Tube Shipment (no suffix) SO-16 B Figure 34. Tape And Reel Shipment (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing P0 (± 0.1) Component Spacing Hole Diameter D (± ...
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... REVISION HISTORY Date Revision Oct. 2004 1 - First Issue Description of Changes VND810-E 19/20 ...
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... VND810-E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...