VNQ830-E STMicroelectronics, VNQ830-E Datasheet - Page 8

IC DRIVER HISIDE QUAD 28-SOIC

VNQ830-E

Manufacturer Part Number
VNQ830-E
Description
IC DRIVER HISIDE QUAD 28-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ830-E

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
65 mOhm
Current - Peak Output
9A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Supply Voltage (min)
5.5 V
Supply Current
0.012 mA
Maximum Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Device Type
High Side
Module Configuration
High Side
Peak Output Current
9A
Output Resistance
0.065ohm
Input Delay
30µs
Output Delay
30µs
Supply Voltage Range
5.5V To 36V
Driver Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

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Part Number
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Quantity
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Part Number:
VNQ830-E
Manufacturer:
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0
VNQ830-E
Figure 6. Switching time Waveforms
Table 13. Electrical Transient Requirements On V
8/21
ISO T/R 7637/1
ISO T/R 7637/1
Test Pulse
Test Pulse
CLASS
3a
3b
3a
3b
1
2
4
5
1
2
4
5
C
E
V
V
INn
OUTn
dV
OUT
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
/dt
+26.5 V
td
+25 V
+25 V
-25 V
-25 V
-4 V
(on)
(on)
I
C
C
C
C
C
C
I
80%
+46.5 V
+50 V
+50 V
-50 V
-50 V
-5 V
II
TEST LEVELS RESULTS
C
C
C
C
C
E
II
10%
CC
TEST LEVELS
Pin
CONTENTS
+66.5 V
-100 V
+75 V
+75 V
-75 V
-6 V
III
td
(off)
90%
III
C
C
C
C
C
E
+86.5 V
+100 V
+100 V
-100 V
-150 V
-7 V
IV
dV
OUT
/dt
(off)
100 ms, 0.01
0.2 ms 10
Delays and
400 ms, 2
Impedance
0.1 s 50
0.1 s 50
2 ms 10
IV
C
C
C
C
C
E
t
t

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