VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 11

• Manufacturer Part Number: VNQ660SP-E
• Description: IC SSR HISIDE QUAD POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ660SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 40 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 6 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 10A
• Output Resistance: 0.04ohm
• Input Delay: 40µs
• Output Delay: 40µs
• Supply Voltage Range: 6V To 36V
• Driver Case Style: PowerSO
• Rohs Compliant: Yes
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

VNQ660SP
Table 12.
Test pulse
Test pulse
ISO T/R
ISO T/R
7637/1
7637/1
Class
3a
3b
3a
3b
C
E
1
2
4
5
1
2
4
5
Electrical transient requirements
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after exposure
and cannot be returned to proper operation without replacing the device.
+ 26.5V
+ 25V
+ 25V
- 25V
- 25V
- 4V
I
C
C
C
C
C
C
I
+ 46.5V
+ 50V
+ 50V
- 50V
- 50V
- 5V
II
C
C
C
C
C
E
II
+ 66.5V
- 100V
+ 75V
+ 75V
- 75V
- 6V
III
Test level
Test level
Contents
+ 86.5V
+ 100V
+ 100V
- 100V
- 150V
- 7V
IV
III
C
C
C
C
C
E
Electrical specifications
Delays and impedance
100ms, 0.01
0.2ms, 10
400ms, 2
0.1µs, 50
0.1µs, 50
2ms, 10
IV
C
C
C
C
C
E
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