VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 16

• Manufacturer Part Number: VNQ660SP-E
• Description: IC SSR HISIDE QUAD POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ660SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 40 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 6 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 10A
• Output Resistance: 0.04ohm
• Input Delay: 40µs
• Output Delay: 40µs
• Supply Voltage Range: 6V To 36V
• Driver Case Style: PowerSO
• Rohs Compliant: Yes
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

Application information
3
Note:
3.1
3.1.1
16/26
Application information
Figure 23. Application schematic
Channels 3 & 4 have the same internal circuit as channel 1 & 2.
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.
2.
where - I
maximum rating section of the device datasheet.
Power dissipation in R
R
R
P
.
D
GND
GND
= ( - V
GND
+5V
C
600mV / 2 (I
is the DC reverse ground pin current and can be found in the absolute
CC
- V
)
CC
2
R
R
/ R
R
R
R
prot
prot
prot
prot
prot
) / ( - I
GND
GND
S(on)max
+5V
GND
(when V
STATUS
INPUT4
INPUT1
INPUT3
)
INPUT2
)
CC
< 0 during reverse battery situations) is:
V
GND
GND
resistor:
R
GND
GND
V
CC
GND
D
GND
only)
OUTPUT1
OUTPUT2
OUTPUT4
OUTPUT3
VNQ660SP
D
ld