MCZ33879EK Freescale Semiconductor, MCZ33879EK Datasheet - Page 12

• Manufacturer Part Number: MCZ33879EK
• Description: IC SWITCH HI/LO SIDE 16B 32-SOIC
• Manufacturer: Freescale Semiconductor
• Type: High Side/Low Side Driverr

Specifications of MCZ33879EK

• Input Type: SPI
• Number Of Outputs: 8
• On-state Resistance: 750 mOhm
• Current - Peak Output: 1.2A
• Voltage - Supply: 5.5 V ~ 26.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (7.5mm Width) Exposed Pad, 32-eSOIC, 32-HSOIC
• Switch Type: High Side/Low Side
• Power Switch Family: MCZ33879
• Input Voltage: -0.3 to 7V
• Power Switch On Resistance: 750mOhm
• Output Current: 600mA
• Mounting: Surface Mount
• Supply Current: 14mA
• Package Type: SOIC W EP
• Operating Temperature (min): -40C
• Operating Temperature Classification: Automotive
• Pin Count: 32
• Power Dissipation: 1.7W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

12
33879
ELECTRICAL CHARACTERISTICS
TYPICAL ELECTRICAL CHARACTERISTICS
NOTE: C
fixture and probe.
SCLK
20
19
18
17
16
15
14
-40
L
V
-25
PWR
represents the total capacitance of the test
Figure 5. Valid Data Delay Time
Figure 8. I
and Valid Time Test Circuit
@ 18 V
T
V
A,
0
33879
Under
DD
Test
Ambient Temperature (
= 5.0 V
PWR
25
33879A
vs. Temperature
33879
50
CS
DO
(Tri-State to Low)
DO
(Tri-State to High)
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Enable and Disable Time Waveforms
0.2 V
75
C
DD
°
L
DO
C)
100
= 200 pF
t
F(CS)
< 50 ns
125
t
t
DO(EN)
DO(EN)
90%
10%
90%
10%
t
R(CS)
90%
SCLK
DO
(Low-to-High)
DO
(High-to-Low)
< 50 ns
0.7 V
7
6
5
4
3
2
1
Figure 9. Sleep State I
-40
t
t
DO(DIS)
DO(DIS)
10%
DD
V
-25
V
3.3/5.0 V
Figure 6. Valid Data Delay Time
V
PWR
0.7 V
Tri-State
Tri-State
and Valid Time Waveforms
0.2 V
0.7 V
@ 13 V
t
0 V
V
R(DI)
V
T
OH
DD
OL
A,
DD
DD
0
Ambient Temperature (
Analog Integrated Circuit Device Data
< 50 ns
25
50%
t
R(DO
PWR
50
Freescale Semiconductor
t
VALID
vs. Temperature
t
0.2
F(DI
0.7 V
75
DD
°
< 50 ns
C)
100
0.2 V
3.3/5.0 V
DD
0 V
V
V
V
V
125
OH
OL
OH
OL