NID5004NT4G ON Semiconductor, NID5004NT4G Datasheet
NID5004NT4G
Specifications of NID5004NT4G
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NID5004NT4G Summary of contents
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... CASE 369C STYLE 2 D5004N = Device Code Y = Year WW = Work Week G = Pb−Free Device ORDERING INFORMATION Device NID5004NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com I Typ D R ...
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MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage Drain Current Total Power Dissipation @ T = 25°C (Note 25°C (Note 2) A Thermal Resistance Junction−to−Case Junction−to−Ambient ...
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MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage ( mA Zero Gate Voltage Drain Current ( Gate Input Current (V = ...
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5 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.15 0.14 0.13 0.12 0.11 0.10 3.0 4.0 5.0 6.0 7 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure ...
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25° 0.1 0.2 0.3 0.4 0.5 0.6 0 SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 7. Diode Forward Voltage vs. Current ...
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... ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ...