NID5004NT4G ON Semiconductor, NID5004NT4G Datasheet - Page 2

• Manufacturer Part Number: NID5004NT4G
• Description: MOSFET N-CH 40V 6.5A DPAK
• Manufacturer: ON Semiconductor
• Series: HDPlus™r
• Type: Low Sider

Specifications of NID5004NT4G

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 110 mOhm
• Current - Peak Output: 6.5A
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Rise Time: 300 ns
• Fall Time: 750 ns
• Supply Current: 0.2 mA
• Maximum Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
3. Not subject to Production Test
4. Normal pre−fault operating range. See thermal limit range conditions.
MOSFET MAXIMUM RATINGS
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance
Single Pulse Drain−to−Source Avalanche Energy
Operating and Storage Temperature Range (Note 4)
@ T
@ T
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
(V
I
L
DD
= 1.8 Apk, L = 160 mH, R
A
A
= 30 Vdc, V
= 25°C (Note 1)
= 25°C (Note 2)
GS
= 5.0 Vdc,
Rating
G
= 25 W) (Note 3)
(T
J
= 25°C unless otherwise noted)
Continuous
http://onsemi.com
2
Symbol
T
V
R
R
R
J
V
E
P
, T
DSS
I
qJC
qJA
qJA
GS
D
AS
D
stg
−55 to 150
Value
"14
273
1.3
2.5
3.0
44
95
50
Internally Limited
°C/W
Unit
Vdc
Vdc
mJ
°C
W