BTS3256D Infineon Technologies, BTS3256D Datasheet - Page 13

• Manufacturer Part Number: BTS3256D
• Description: IC SWITCH SMART LOWSIDE TO252-5
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3256D

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 10 mOhm
• Current - Output / Channel: 7.5A
• Current - Peak Output: 42A
• Voltage - Supply: 5.5 V ~ 30 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
The power stage is built by a N-channel vertical power MOSFET (DMOS).
6.1
The on-state resistance depends on the junction temperature T
on-state resistance R
Figure 8
Figure 9
Datasheet
Power Stage
Output On-state Resistance
Typical On-State Resistance R
Typical On-State Resistance R
DS(on)
18
16
14
12
10
31
26
21
16
11
8
6
6
.
-50 -25
0
0
typ.
25
10
V
DSon
DSon
S
T [ °C ]
[ V ]
50
= f( T
= f( V
typ.
75 100 125 150 175
J
13
S
), V
), V
S
IN
20
= 10 V, V
= high, T
J
.
Figure 8
IN
ambient
= high
Smart Low Side Power Switch
shows this dependence for the typical
30
= 25 °C
rdson_Vs.emf
rdson_Tj.emf
HITFET - BTS 3256D
Rev. 1.0, 2009-05-05
Power Stage