BTS141 E3064 Infineon Technologies, BTS141 E3064 Datasheet - Page 4
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BTS141 E3064
Manufacturer Part Number
BTS141 E3064
Description
IC SWITCH LOSIDE PWR N-CH TO-220
Manufacturer
Infineon Technologies
Series
HITFET®r
Type
Low Sider
Specifications of BTS141 E3064
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
25 mOhm
Current - Output / Channel
12A
Current - Peak Output
100A
Voltage - Supply
2.2 V ~ 10 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
TO-220AB
Switch Type
Low Side
Power Switch Family
BTS 141
Power Switch On Resistance
31mOhm
Output Current
12A
Mounting
Surface Mount
Package Type
TO-220 SMD
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
2 +Tab
Power Dissipation
149W
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BTS141E3064
BTS141E3064NK
SP000011220
BTS141E3064NK
SP000011220
Datasheet
2 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
1 Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Characteristics
Initial peak short circuit current limit
V
Current limit
V
T
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
I
Inverse Diode
Inverse diode forward voltage
I
Electrical Characteristics
Parameter
at T
D
D
F
j
IN
IN
L
L
L
L
= -40...+150 °C
= 5*12A, t
= 12 A, T
= 12 A, T
= 2,2 Ω, V
= 2,2 Ω, V
= 2,2 Ω, V
= 2,2 Ω, V
= 10 V, V
= 10 V, V
j
=25°C, unless otherwise specified
j
j
m
1)
= 25 °C, V
= 150 °C, V
DS
DS
IN
IN
IN
IN
= 300 µS, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
= 12 V
= 12 V, t
V
V
70 to 50% V
50 to 70% V
IN
IN
to 90% I
to 10% I
bb
bb
m
= 32 V
2)
IN
= 350 µs,
= 32 V
= 0 V
D
D
bb
bb
bb
bb
bb
bb
:
:
= 12 V
= 12 V
= 12 V
= 12 V
:
:
4
I
I
t
t
-dV
dV
T
E
V
Symbol
D(SCp)
D(lim)
on
off
jt
AS
SD
DS
DS
/dt
/dt
off
on
Smart Low Side Power Switch
4000
min.
900
150
25
-
-
-
-
-
-
Values
1.13
typ.
100
165
35
40
70
1
1
-
-
Rev. 1.3, 2008-12-10
HITFET BTS 141
max.
100
170
50
3
3
-
-
-
-
-
A
µs
V/µs
°C
mJ
V
Unit