BUK1M200-50SDLD,11 NXP Semiconductors, BUK1M200-50SDLD,11 Datasheet - Page 6
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BUK1M200-50SDLD,11
Manufacturer Part Number
BUK1M200-50SDLD,11
Description
TOPFET QUAD 50V 20-SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SDLD11.pdf
(14 pages)
Specifications of BUK1M200-50SDLD,11
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Peak Output
1.3A
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Other names
934057352115
BUK1M200-50SDLDT/R
BUK1M200-50SDLDT/R
BUK1M200-50SDLDT/R
BUK1M200-50SDLDT/R
Philips Semiconductors
6. Static characteristics
Table 5:
Limits are valid for 40 C
[1]
[2]
[3]
9397 750 10956
Product data
Symbol
Off-state output characteristics
V
I
On-state output characteristic
R
Input characteristics
V
I
V
t
V
R
Overload protection characteristic
I
Short circuit load protection characteristics
P
T
Overtemperature protection characteristic
T
Source-drain diode characteristic
V
DSS
IS
rst(latch)
D(lim)
DS(CL)
IS(th)
IS(rst)
IS(CL)
OV(th)
d(sc)
j(th)
SD
DSon
IG
The supply for the logic and overload protection is taken from the input.
The input voltage below which the overload protection circuits will be reset.
Not directly measurable from the device terminals.
Parameter
drain-source clamping voltage
drain-source leakage current
drain-source on-state resistance
input-source threshold voltage
input-source current
input-source reset voltage
latch reset time
input-source clamping voltage
input-gate resistance
drain current limiting
overload power threshold
short circuit response time
threshold junction temperature
source-drain (diode forward)
voltage
Static characteristics
[1]
T
sp
+150 C and typical values for T
[4]
Conditions
V
V
V
V
I
V
normal operation
protection latched
t
I
V
V
4 V
V
I
D
rst
I
S
IS
IS
IS
IS
DS
IS
IS
DS
= 1.5 mA;
T
T
T
V
V
V
V
V
V
4 V
= 100 mA;
= 2 A; V
Rev. 01 — 02 April 2003
0.01;
sp
sp
sp
= 0 V; I
= 0 V; I
= 0 V; V
IS
IS
IS
IS
IS
IS
= 5 V
= 5 V;
= 5 V; I
100 s;
4 V; t
= 5 V
V
= 25 C;
= 25 C
= 25 C;
= 4 V
= 5 V
= 3 V;
= 5 V;
= 4.5 V
100 mV;
IS
V
Figure 16
IS
Figure 14
IS
D
D
p
5.5 V; I
DS
D
Figure 16
Figure 11
Figure 18
= 10 mA
= 200 mA; t
= 0 V; t
Figure 15
Figure 5
= 1 mA
5.5 V;
Figure 10
300 s;
= 40 V
Figure 17
Figure 9
sp
D
p
= 25 C unless otherwise specified.
= 300 s
280 mA or
and
and
p
0.01;
6
12
300 s;
BUK1M200-50SDLD
[2]
[6]
[3]
[5]
[7]
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
50
50
-
-
-
-
0.6
1.1
100
80
200
130
1.5
10
5.5
-
0.8
0.7
0.6
-
-
150
-
Quad channel TOPFET™
Typ
-
62
-
0.05
-
150
-
1.6
220
195
400
250
2
40
-
33
1.3
-
-
17
1.6
165
0.83
Max
-
70
100
10
380
200
2.4
2.1
400
330
650
430
2.9
100
8.5
-
1.7
-
1.8
-
-
-
1.1
Unit
V
V
m
m
V
V
V
V
k
A
A
A
W
ms
V
C
6 of 14
A
A
A
A
A
A
s