VNS3NV04D STMicroelectronics, VNS3NV04D Datasheet - Page 4

• Manufacturer Part Number: VNS3NV04D
• Description: MOSFET 2N-CH 40V 3.5A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS3NV04D

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 120 mOhm
• Current - Peak Output: 5A
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 45 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 4000 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2668-5; 497-2668-5; 497-3318-5

VNS3NV04D
ELECTRICAL CHARACTERISTICS (continued) (T
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
(*) Pulsed: Pulse duration = 300 s, duty cycle 1.5%
4/14
2
Symbol
Symbol
(dI/dt)
Symbol
Symbol
V
g
C
t
t
t
t
I
SD
t
T
d(on)
d(off)
d(on)
d(off)
RRM
E
fs
T
Q
I
dlim
OSS
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
r
f
f
rr
(*)
i
(*)
on
Forward
Transconductance
Output Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
Parameter
j
< 150°C, unless otherwise specified)
V
V
V
V
(see figure 1)
V
V
(see figure 1)
V
V
V
I
I
I
V
(see test circuit, figure 2)
V
V
V
starting T
V
(see figures 3 & 4)
gen
SD
SD
DD
DS
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=1.5A; V
=1.5A; dI/dt=12A/ s
=5V; V
=5V; V
=5V; V
=5V; R
=13V; f=1MHz; V
=13V; I
=15V; I
=15V; I
=15V; I
=12V; I
=2.13mA (see figure 5)
=30V; L=200 H
=5V; R
=5V; R
=5V; R
j
=25°C; V
DS
DS
DS
gen
Test Conditions
D
Test Conditions
Test Conditions
Test Conditions
D
D
D
D
gen
gen
gen
IN
=1.5A
=1.5A
=1.5A
=1.5A
=1.5A; V
=13V
=13V
=13V; T
=R
=0V
=R
=2.2K
=R
IN MINn
j
IN MINn
IN MINn
=25°C, unless otherwise specified)
DD
j
IN
=T
IN
=24V
=0V
=220
=5V
=220
=220
jsh
L=24mH
Min
Min
Min
150
135
100
3.5
Min
10
0.45
Typ
Typ
Typ
250
250
107
175
450
Typ
0.8
0.7
150
2.5
3.3
2.0
4.7
8.5
5.0
90
37
10
15
5
1350
Max
Max
Max
1.35
10.0
Max
300
750
750
200
7.5
6.0
20
7
A/ s
Unit
Unit
Unit
Unit
mA
mJ
nC
ns
°C
°C
pF
ns
ns
ns
ns
V
A
A
S
C
s
s
s
s
s