VNS3NV04D STMicroelectronics, VNS3NV04D Datasheet - Page 8

• Manufacturer Part Number: VNS3NV04D
• Description: MOSFET 2N-CH 40V 3.5A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS3NV04D

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 120 mOhm
• Current - Peak Output: 5A
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 45 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 4000 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2668-5; 497-2668-5; 497-3318-5

Static Drain-Source On resistance Vs. Input
Voltage
VNS3NV04D
Source-Drain Diode Forward Characteristics
Derating Curve
8/14
1
1
1
Rds(on) (mohms)
250
225
200
175
150
125
100
Vsd (mV)
1100
1050
1000
75
50
25
950
900
850
800
750
700
650
600
0
3
0
1
3.5
Vin=0V
2
3
4
4
4.5
5
Vin(V)
Id (A)
6
5
7
8
5.5
Tj=150ºC
Tj=-40ºC
Id=1.5A
Tj=25ºC
9
10
6
11
6.5
12
Static Drain Source On Resistance
Static Drain-Source On resistance Vs. Input
Voltage
Transconductance
Rds(on) (mohms)
1000
900
800
700
600
500
400
300
200
100
Rds(on) (mohms)
300
275
250
225
200
175
150
125
100
0
Gfs (S)
10
75
50
25
11
0.05
0
9
8
7
6
5
4
3
2
0
1
0
3
Tj=-40ºC
Tj=25ºC
Tj=150ºC
0.1
0.5
Vds=13V
3.5
0.15
1
0.2
1.5
4
Tj=-40ºC
0.25
2
4.5
Id(A)
2.5
0.3
Vin(V)
Id (A)
0.35
3
5
3.5
0.4
Vin=2.5V
5.5
0.45
4
Tj=150ºC
Tj=25ºC
4.5
0.5
Tj=150ºC
Tj=-40ºC
Tj=25ºC
6
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Id=3.5A
Id=1A
0.55
5
6.5
5.5
1
1