FDR8521L Fairchild Semiconductor, FDR8521L Datasheet - Page 156
FDR8521L
Manufacturer Part Number
FDR8521L
Description
MOSFET P-CH 20V SSOT-8
Manufacturer
Fairchild Semiconductor
Type
High Side Switchr
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8521L
Number Of Outputs
1
Rds (on)
70 mOhm
Internal Switch(s)
Yes
Current Limit
2.9A
Voltage - Input
3 ~ 20 V
Operating Temperature
-55°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8521L
FDR8521LTR
FDR8521LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR8521L
Manufacturer:
IXYS
Quantity:
10 000
- Current page: 156 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
1V5KE27CA
1V5KE30A
1V5KE30CA
1V5KE33A
1V5KE33CA
1V5KE36A
1V5KE36CA
1V5KE39A
1V5KE39CA
1V5KE43A
1V5KE43CA
1V5KE47A
1V5KE47CA
1V5KE51A
1V5KE51CA
1V5KE56A
1V5KE56CA
1V5KE62A
1V5KE62CA
1V5KE68A
1V5KE68CA
1V5KE75A
1V5KE75CA
1V5KE82A
1V5KE82CA
1V5KE91A
1V5KE91CA
1V5KE100A
1V5KE100CA
1V5KE110A
1V5KE110CA
1V5KE120A
1V5KE120CA
1V5KE130A
1V5KE130CA
Products
Voltage (V)
Stand-off
Reverse
V
23.1
25.6
25.6
28.2
28.2
30.8
30.8
33.3
33.3
36.8
36.8
40.2
40.2
43.6
43.6
47.8
47.8
58.1
58.1
64.1
64.1
70.1
70.1
77.8
77.8
85.5
85.5
102
102
111
111
RWM
53
53
94
94
V
Min
25.7
28.5
28.5
31.4
31.4
34.2
34.2
37.1
37.1
40.9
40.9
44.7
44.7
48.5
48.5
53.2
53.2
58.9
58.9
64.6
64.6
71.3
71.3
77.9
77.9
86.5
86.5
106
106
114
114
124
124
95
95
BR
Voltage (V)
Breakdown
Max
28.4
31.5
31.5
34.7
34.7
37.8
37.8
45.2
45.2
49.4
49.4
53.6
53.6
58.8
58.8
65.1
65.1
71.4
71.4
78.8
78.8
86.1
86.1
95.5
95.5
105
105
116
116
126
126
137
137
41
41
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-151
37.5
41.4
41.4
45.7
45.7
49.9
49.9
53.9
53.9
59.3
59.3
64.8
64.8
70.1
70.1
104
104
113
113
125
125
137
137
152
152
165
165
179
179
V
77
85
92
77
85
92
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
36.2
36.2
30.1
30.1
25.3
25.3
23.2
23.2
21.4
21.4
19.5
19.5
17.7
17.7
16.3
16.3
14.6
14.6
13.3
13.3
PPM
9.9
9.1
8.4
9.9
9.1
8.4
40
33
33
28
28
12
12
11
11
Leakage @ V
I
R
Max Reverse
(µA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDR8521L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: