FDR8521L Fairchild Semiconductor, FDR8521L Datasheet - Page 162
FDR8521L
Manufacturer Part Number
FDR8521L
Description
MOSFET P-CH 20V SSOT-8
Manufacturer
Fairchild Semiconductor
Type
High Side Switchr
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8521L
Number Of Outputs
1
Rds (on)
70 mOhm
Internal Switch(s)
Yes
Current Limit
2.9A
Voltage - Input
3 ~ 20 V
Operating Temperature
-55°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8521L
FDR8521LTR
FDR8521LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR8521L
Manufacturer:
IXYS
Quantity:
10 000
- Current page: 162 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SMCJ48A
SMCJ48CA
SMCJ51A
SMCJ51CA
SMCJ54A
SMCJ54CA
SMCJ58A
SMCJ58CA
SMCJ60A
SMCJ60CA
SMCJ64A
SMCJ64CA
SMCJ70A
SMCJ70CA
SMCJ75A
SMCJ75CA
SMCJ78A
SMCJ78CA
SMCJ85A
SMCJ85CA
SMCJ90A
SMCJ90CA
SMCJ100A
SMCJ100CA
SMCJ110A
SMCJ110CA
SMCJ120A
SMCJ120CA
SMCJ130A
SMCJ130CA
SMCJ150A
SMCJ150CA
SMCJ160A
SMCJ160CA
SMCJ170A
Products
Voltage (V)
Stand-off
Reverse
V
100
100
110
110
120
120
130
130
150
150
160
160
170
RWM
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
V
Min
53.3
53.3
56.7
56.7
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
60
60
BR
Voltage (V)
Breakdown
111.1
111.1
Max
58.9
58.9
62.7
62.7
66.3
66.3
71.2
71.2
73.7
73.7
78.6
78.6
92.1
92.1
95.8
95.8
104
104
123
123
135
135
147
147
159
159
185
185
197
197
209
86
86
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-157
77.4
77.4
82.4
82.4
87.1
87.1
93.6
93.6
96.8
96.8
103
113
113
121
121
126
126
137
137
146
146
162
162
177
177
193
193
209
209
243
243
259
259
275
1.3
V
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
19.4
19.4
18.2
18.2
17.2
17.2
15.5
15.5
14.6
14.6
13.3
13.3
12.4
12.4
11.9
11.9
10.9
10.9
10.3
10.3
PPM
9.3
8.5
7.8
7.2
6.2
5.8
5.5
9.3
8.5
7.8
7.2
6.2
5.8
16
16
Leakage @ V
I
R
Max Reverse
(µA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDR8521L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: