SI3460-E03-GM Silicon Laboratories Inc, SI3460-E03-GM Datasheet - Page 8
![IC POWER MANAGEMENT CTLR 11VQFN](/photos/29/9/290915/si3460_sml.jpg)
SI3460-E03-GM
Manufacturer Part Number
SI3460-E03-GM
Description
IC POWER MANAGEMENT CTLR 11VQFN
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI3460-E02-GMR.pdf
(24 pages)
Specifications of SI3460-E03-GM
Package / Case
11-VQFN
Applications
Power Sourcing Equipment (PSE)
Current - Supply
500mA
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Product
PoE / LAN Solutions
Supply Voltage (max)
16 V
Supply Voltage (min)
11 V
Operating Temperature Range
- 40 C to + 85 C
Mounting Style
SMD/SMT
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Pin Count
11
Mounting
Surface Mount
Package Type
QFN EP
Case Length
3mm
Case Height
0.83mm
Screening Level
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3460-E03-GM
Manufacturer:
SAMSUNG
Quantity:
1 400
Company:
Part Number:
SI3460-E03-GM
Manufacturer:
Silicon Laboratories Inc
Quantity:
135
Si3460
3. Si3460-EVB Performance Characteristics
When implemented in accordance with the recommended external components and layout guidelines, the Si3460
controller enables the following typical performance characteristics in single-port PSE applications. Refer to the
Si3460-EVB applications note, schematics, and user's guide for more details.
Table 5. PSE Performance Characteristics
8
Parameter
Protection and Current Control
Overload current limit
Overload current
threshold
Overload current limit
Overload time
Output power at overload
Disconnect current
Detection Specifications
Detection voltage
Minimum signature
resistance
Maximum signature
resistance
Classification Specifications
Classification voltage
Classification current limit
Classification current
region
Notes:
1. Typical specifications are based on an ambient operating temperature of 25 ºC and V
2. See “3. Si3460-EVB Performance Characteristics” for more details.
3. Absolute classification current limits are configurable.See section "4.3.2. Classification" on page 12.
specified.
3
2
I
CLASS_REGION
2
R
Symbol
R
V
I
V
DETmax
CLASS
DETmin
I
T
P
CLASS
I
I
I
CUT
MIN
LIM
LIM
DET
LIM
LIM
Output = 100 across V
Class 0/3/4
Class 1
Class 2
All class levels;
Output = 100 across V
Output = 100 across V
Disconnect current
Detection point 1 (w/ 10 k source)
Detection point 2 (w/ 10 k source)
Detection point 3 (w/ 10 k source)
0 mA < ICLASS < 45 mA
Measured with 200 across V
1
Rev. 1.1
Conditions
Class 0
Class 1
Class 2
Class 3
Class 4
OUT
OUT
OUT
OUT
15,400/
IN
5000/
7000/
–20.5
V
V
V
15.4
26.5
Min
400
400
OUT
OUT
OUT
50
15
55
16
25
35
= +12 V unless otherwise
—
—
—
5
0
8
Typ
425
340
154
425
4.5
7.5
4.5
7.5
88
60
17
17
29
—
—
—
—
—
—
—
–15.5
Max
450
400
180
450
98
75
10
19
33
95
13
21
31
45
—
—
—
—
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
ms
k
k
W
V
V