L6910GTR STMicroelectronics, L6910GTR Datasheet - Page 18

• Manufacturer Part Number: L6910GTR
• Description: IC PWM BUCK BST VM 16SOIC
• Manufacturer: STMicroelectronics

Specifications of L6910GTR

• Pwm Type: Voltage Mode
• Number Of Outputs: 1
• Frequency - Max: 230kHz
• Duty Cycle: 100%
• Voltage - Supply: 5 V ~ 12 V
• Buck: Yes
• Boost: Yes
• Flyback: No
• Inverting: No
• Doubler: No
• Divider: No
• Cuk: No
• Isolated: No
• Operating Temperature: -40°C ~ 150°C
• Package / Case: 16-SOIC (3.9mm Width)
• Frequency-max: 230kHz
• Topology: Step Down
• Output Voltage: 0.9 V to 12 V
• Output Current: 1300 mA
• Switching Frequency: 50 KHz to 1000 KHz
• Duty Cycle (max): 100 %
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Synchronous Pin: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6111-2

L6910G
8
Double Data Rate (DDR) Memories require a particular Power Management Architecture. This is due to the fact
that the trace between the driving chipset and the memory input must be terminated with resistors.
Since the Chipset driving the Memory has a push pull output buffer, the Termination voltage must be capable
of sourcing and sinking current.
Moreover, the Termination voltage must be equal to one half of the memory supply (the input of the memory is
a differential stage requiring a reference bias midpoint) and in tracking with it. For DDRI the Memory Supply is
2.5V and the Termination voltage is 1.25V while, for DDRII, the Memory Supply is 1.8V and the Termination
voltage is 0.9V. Fig. 23 shows a complete DDRI Memory and Termination Power Supply realized by using 2 x
L6910G. The 2.5V section is powering the memory while the 1.25V section is providing the termination voltage.
The tracking between the two sections is realized by providing the EAREF voltage of the 1.25V section through
a resistor divider connected to the 2.5V.
Figure 21. Application idea : DDR Memory Supply
The current required by the memory and the termination supply, depends on the memory type and size.
The figure 22, 23 shows the efficiency of the L6910G for the termination section of the application shown in fig.
21, in sink and source mode. The figures show the efficiency values also when the input voltage is coming di-
rectly from the 12V rail.
18/26
APPLICATION IDEA 1: DDR MEMORY AND TERMINATION SUPPLY
12V
12V
12V
VIN
VIN
VIN
R
R
R
R
R
R
VIN
VIN
VIN
12V
12V
12V
EAREF
EAREF
EAREF
VCC
VCC
VCC
OSC
OSC
OSC
GND
GND
GND
SS
SS
SS
EAREF
EAREF
EAREF
OSC
OSC
OSC
VCC
VCC
VCC
GND
GND
GND
SS
SS
SS
15
15
15
7
7
7
4
4
4
2
2
2
8
8
8
12
12
12
-
-
-
+
+
+
5
5
5
15
15
15
7
7
7
4
4
4
2
2
2
8
8
8
BOOT
BOOT
BOOT
L6910
L6910
L6910
12
12
12
5
5
5
U1
U1
U1
BOOT
BOOT
BOOT
L6910
L6910
L6910
U2
U2
U2
3
3
3
OCSET
OCSET
OCSET
3
3
3
11
11
11
14
14
14
13
13
13
6
6
6
10
10
10
OCSET
OCSET
OCSET
9
9
9
1
1
1
6
6
6
11
11
11
10
10
10
14
14
14
13
13
13
UGATE
UGATE
UGATE
LGATE
LGATE
LGATE
9
9
9
PHASE
PHASE
PHASE
PGND
PGND
PGND
PGOOD
PGOOD
PGOOD
VREF
VREF
VREF
1
1
1
STS11NF3LL
STS11NF3LL
STS11NF3LL
UGATE
UGATE
UGATE
PHASE
PHASE
PHASE
LGATE
LGATE
LGATE
PGOOD
PGOOD
PGOOD
VREF
VREF
VREF
PGND
PGND
PGND
STS8DNF3LL
STS8DNF3LL
STS8DNF3LL
STS11NF3LL
STS11NF3LL
STS11NF3LL
PWRGD
PWRGD
PWRGD
V
V
V
2.5V@15A
2.5V@15A
2.5V@15A
PWRGD
PWRGD
PWRGD
DDQ
DDQ
DDQ
V
V
V
1.25V@ - 5A
1.25V@ - 5A
1.25V@ - 5A
TT
TT
TT
+
+
+
TERMINATION
TERMINATION
TERMINATION
NETWORK
NETWORK
NETWORK
MEMORY
MEMORY
MEMORY
CHIPSET
CHIPSET
CHIPSET
DDR
DDR
DDR
VREF
VREF
VREF