FSEZ1216NY Fairchild Semiconductor, FSEZ1216NY Datasheet - Page 4

• Manufacturer Part Number: FSEZ1216NY
• Description: MOSFET PWM PWR 30V 1A 8-DIP
• Manufacturer: Fairchild Semiconductor

Specifications of FSEZ1216NY

• Output Isolation: Isolated
• Frequency Range: 39kHz ~ 45kHz
• Voltage - Input: 5.5 V ~ 25 V
• Voltage - Output: 600V
• Power (watts): 800mW
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Voltage - Supply: 5.5 V ~ 25 V
• Frequency-max: 45kHz
• Number Of Outputs: 1
• Duty Cycle: 75%
• Pwm Type: Current Mode
• Buck: No
• Boost: No
• Flyback: Yes
• Inverting: No
• Doubler: No
• Divider: No
• Cuk: No
• Isolated: No
• Configuration: Single
• Resistance Drain-source Rds (on): 9.3 Ohms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 1 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 105 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Operating Temperature (max): 105C
• Operating Temperature (min): -40C
• Pin Count: 8
• Mounting: Through Hole
• Screening Level: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 Fairchild Semiconductor Corporation
FSEZ1216 • Rev. 1.0.1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
T
Symbol
All voltage values, except differential voltages, are given with respect to GND pin.
A
V
V
V
ESD
T
V
V
V
E
Θ
Θ
COMV
I
I
P
COMI
T
T
I
DM
STG
VDD
AR
CS
DS
VS
D
AS
JA
JC
D
J
L
Operating Ambient Temperature
DC Supply Voltage
VS Pin Input Voltage
CS Pin Input Voltage
Voltage Error Amplifier Output Voltage
Voltage Error Amplifier Output Voltage
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation (T
Thermal Resistance Junction-to-Air
Thermal Resistance Junction-to-Case
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Wave Soldering or IR, 10 Seconds)
Electrostatic Discharge Capability, Human Body Model,
JEDEC: JESD22-A114
Electrostatic Discharge Capability, Charged Device
Model, JEDEC: JESD22-C101
Parameter
(1)
A
Parameter
＜50°C)
Conditions
4
T
T
C
C
=25°C
=100°C
Min.
-40
Min.
Typ.
-0.3
-0.3
-0.3
-0.3
-55
Max.
+150
+150
+260
1250
Max.
+105
600
800
113
7.0
7.0
7.0
7.0
1.0
0.6
2.5
30
33
67
4
1
www.fairchildsemi.com
°C/W
°C/W
Unit
Unit
mW
mJ
KV
°C
°C
°C
°C
V
V
V
V
V
V
A
A
A
V