FSEZ1216NY Fairchild Semiconductor, FSEZ1216NY Datasheet - Page 6

MOSFET PWM PWR 30V 1A 8-DIP

FSEZ1216NY

Manufacturer Part Number
FSEZ1216NY
Description
MOSFET PWM PWR 30V 1A 8-DIP
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FSEZ1216NY

Output Isolation
Isolated
Frequency Range
39kHz ~ 45kHz
Voltage - Input
5.5 V ~ 25 V
Voltage - Output
600V
Power (watts)
800mW
Operating Temperature
-40°C ~ 105°C
Package / Case
8-DIP (0.300", 7.62mm)
Voltage - Supply
5.5 V ~ 25 V
Frequency-max
45kHz
Number Of Outputs
1
Duty Cycle
75%
Pwm Type
Current Mode
Buck
No
Boost
No
Flyback
Yes
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
No
Configuration
Single
Resistance Drain-source Rds (on)
9.3 Ohms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
1 A
Power Dissipation
800 mW
Maximum Operating Temperature
+ 105 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Operating Temperature (max)
105C
Operating Temperature (min)
-40C
Pin Count
8
Mounting
Through Hole
Screening Level
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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© 2009 Fairchild Semiconductor Corporation
FSEZ1216 • Rev. 1.0.1
Electrical Characteristics
V
Voltage-Error-Amplifier Section
Current-Error-Amplifier Section
Cable Compensation Section
Internal MOSFET Section
Over-Temperature-Protection Section
Notes:
2.
3.
4.
∆BV
DD
Symbol
I
I
DCY
V-SOURCE
R
I-SOURCE
V
V
BV
=15V and T
V
I
t
I
C
V-SINK
t
T
D-OFF
C
Pulse test: pulse width ≦ 300µs, duty cycle ≦ 2%.
Essentially independent of operating temperature.
When over-temperature protection is activated, the power system enters latch mode and output is disabled.
I-SINK
DS(ON)
V
DSS
I
V-HGH
D-ON
V
COMR
I
V
V
I-HGH
DSS
OTP
I
SM
OSS
t
t
ISS
VR
S
IR
DSS
r
f
N
G
MAX
/∆T
J
Reference Voltage
Green Mode Starting Voltage on
COMV Pin
Green Mode Ending Voltage on
COMV Pin
Output Sink Current
Output Source Current
Output High Voltage
Reference Voltage
Output Sink Current
Output Source Current
Output High Voltage
Variation Test Voltage on COMR
Pin for Cable Compensation
Maximum Duty Cycle
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Maximum Continuous Drain-
Source Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Static Drain-Source On-
Resistance
Drain-Source Leakage Current
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Threshold Temperature for
OTP
A
=25°C unless otherwise specified.
(4)
Parameter
(2,3)
f
f
V
V
V
V
V
V
R
I
I
I
V
V
V
V
S
S
D
D
D
VS
VS
VS
CS
CS
CS
DS
DS
DS
GS
=f
=1KHz
COMR
=250μA, V
=250μA, Referenced to 25°C
=0.5A, V
=3V, V
=2V, V
=2.3V
OSC
=3V, V
=0V, V
=0V
=600V, V
=480V, V
=300V, I
=0V, V
=100k
-2KHz, V
6
Conditions
COMV
COMV
COMI
COMI
GS
DS
D
GS
=25V, f
=10V
GS
GS
=1.1A, R
=2.5V
=2.5V
=0V
=2.5V
=2.5V
=0V, T
=0V, T
VS
=2.3V
S
=1MHz
C
C
G
=25°C
=100°C
=25Ω
2.475
2.475
Min.
600
4.5
4.5
2.500
2.500
0.735
Typ.
+140
130
2.8
0.8
0.6
9.3
90
90
55
55
75
21
13
27
19
7
Max.
2.525
2.525
11.5
170
10
24
52
36
64
25
1
4
1
www.fairchildsemi.com
Units
V/°C
μA
μA
μA
μA
μA
pF
pF
ns
ns
ns
ns
°C
%
V
V
V
V
V
V
V
V
A
A

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