HIP6311CBZ Intersil, HIP6311CBZ Datasheet - Page 16

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HIP6311CBZ

Manufacturer Part Number
HIP6311CBZ
Description
IC CTRLR PWM MULTIPHASE 20-SOIC
Manufacturer
Intersil
Datasheet

Specifications of HIP6311CBZ

Pwm Type
Controller
Number Of Outputs
4
Frequency - Max
305kHz
Voltage - Supply
4.75 V ~ 5.25 V
Buck
Yes
Boost
No
Flyback
No
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
No
Operating Temperature
0°C ~ 70°C
Package / Case
20-SOIC (7.5mm Width)
Frequency-max
305kHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Duty Cycle
-
dissipated by the Driver IC and don't heat the MOSFETs.
However, large gate-charge increases the switching time,
t
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
A diode, anode to ground, may be placed across Q2 and Q4.
These diodes function as a clamp that catches the negative
inductor swing during the dead time between the turn off of
the lower MOSFETs and the turn on of the upper MOSFETs.
The diodes must be a Schottky type to prevent the lossy
parasitic MOSFET body diode from conducting. It is usually
acceptable to omit the diodes and let the body diodes of the
lower MOSFETs clamp the negative inductor swing, but
efficiency could drop one or two percent as a result. The
diode's rated reverse breakdown voltage must be greater
than the maximum input voltage.
P
P
SW
UPPER
LOWER
which increases the upper MOSFET switching losses.
=
=
I
----------------------------------------------------------- -
I
-------------------------------------------------------------------------------- -
O
O
2
2
×
×
r
r
DS ON
DS ON
V
(
(
IN
)
V
)
×
×
IN
V
(
V
OUT
16
IN
+
V
I
--------------------------------------------------------- -
OUT
O
×
V
)
IN
×
2
t
SW
×
F
SW
HIP6311
December 27, 2004
FN4817.3

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