BD9701T Rohm Semiconductor, BD9701T Datasheet - Page 13

• Manufacturer Part Number: BD9701T
• Description: IC REG SW 1CHAN 1.5A TO220FP-5
• Manufacturer: Rohm Semiconductor
• Type: Step-Down (Buck)r

Specifications of BD9701T

• Internal Switch(s): Yes
• Synchronous Rectifier: No
• Number Of Outputs: 1
• Voltage - Output: 1 ~ 32 V
• Current - Output: 1.5A
• Frequency - Switching: 100kHz
• Voltage - Input: 8 ~ 36 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Straight Leads)
• Power - Output: 2W
• Output Current: 1.5 A
• Input Voltage: 35 V
• Switching Frequency: 100 KHz
• Operating Temperature Range: - 40 C to + 85 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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8. IC pin input
9. Common impedance
10. Pin short and mistake fitting
(PinA)
N
This IC is a monolithic IC which (as below) has P+ substrate and betweenthe various pin. A P-N junction is formed from
this P layer of each pin. For example the relation between each potential is as follows. (When GND > PinB and GND >
PinA, the P-N junction operates as a parasitic diode.) Parasitic diodes can occur inevitably in the structure of the IC. The
operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical
damage. Accordingly, you must not use methods by which parasitic diodes operate, such as applying a voltage that is
lower than the GND(P substrate)voltage to an input pin.
Power supply and ground wiring should reflect consideration of the need to lower common impedance and minimize ripple
as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and
capacitance).
Do not short-circuit between OUT pin and VCC pin, OUT pin and GND pin,
or VCC pin and GND pin. When soldering the IC on circuit board,
please be unusually cautious about theorientation and the position of the IC.
Parasitic diode
P
＋
(PinA)
GND
Resistance
P substrate
N
Parasitic diode
GND
P
Fig.34 Simplified structure of a Bipolar IC
Back current prevention diode
P
＋
Other adjacent components
Bypass diode
Ｎ
VCC
(PinB)
Parasitic diode
Fig.35
13/16
N
Output Pin
P
＋
(PinB)
Ｃ
Transistor (NPN)
B
B
N
N
P substrate
ＧＮＤ
P
E
C
GND
Parasitic diode
E
P
＋
N
Technical Note
2009.04- Rev.B
GND