S-8357E50MC-NLJT2G Seiko Instruments, S-8357E50MC-NLJT2G Datasheet - Page 32

• Manufacturer Part Number: S-8357E50MC-NLJT2G
• Description: IC REG CTRL PWM 5.0V SOT23-5
• Manufacturer: Seiko Instruments
• Type: Step-Up (Boost)r

Specifications of S-8357E50MC-NLJT2G

• Internal Switch(s): No
• Synchronous Rectifier: No
• Number Of Outputs: 1
• Voltage - Output: 5V
• Current - Output: 100mA
• Frequency - Switching: 100kHz
• Voltage - Input: 0.9 ~ 10 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5, SC-74A, SOT-25
• Power - Output: 250mW
• Output Voltage: 5 V
• Input Voltage: 10 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

32
STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER
S-8355/56/57/58 Series
4.2 Bipolar (NPN) Type
A circuit example using the CPH3210 (h
(NPN) is shown in Figure 20 to 25 in the “
transistor determine the driving capacity to increase the output current using a bipolar transistor. A peripheral
circuit example of the transistor is shown in Figure 19.
*1. V
The recommended R
transistor (h
A small R
pulse and the voltage may drop due to wiring resistance or other factors in the actual circuit, therefore the
optimum R
Connecting the speed-up capacitor (C
switching loss and improves the efficiency.
The C
Select a C
characteristics of the bipolar transistor.
*1. For E, G, J, K, L, M, P and Q type,
DD
b
for E, G, J, K, L, M, P and Q types.
value is calculated according to
b
b
b
value can increase the output current, but the efficiency decreases. Since a current may flow on the
value should be determined by experiment.
value after performing sufficient evaluation since the optimum C
FE
) using
b
value is around 1 k
I =
b
h
I
PK
FE
Figure 19 External Transistor Peripheral Circuit
, and select the smaller R
Pch
Nch
R
Seiko Instruments Inc.
b
C
b
) in parallel with the R
b
FE
=
Ω
≤
VOUT
V
. Actually, calculate the necessary base current (I
= 200 to 560) from Sanyo Electric Co., Ltd. As a bipolar transistor
2
DD
π
I
Standard Circuits”. The h
b
•
−
*1
R
0
EXT
7 .
b
•
1
−
f
osc
I
0
EXTH
•
2200 pF
4 .
0
1 kΩ
7 .
C
R
.
b
b
.
b
resistance as shown in Figure 19 , decreases
b
value than
I
PK
FE
b
value and R
value differs depending upon the
R
b
=
V
b
OUT
value of the bipolar
I
b
b
−
) from the bipolar
0
Rev.7.0
7 .
−
I
0
EXTH
4 .
_00
*1
.