MCZ79076EGR2 Freescale Semiconductor, MCZ79076EGR2 Datasheet - Page 7

• Manufacturer Part Number: MCZ79076EGR2
• Description: IC IGNITION CTRL ELECTR 16-SOIC
• Manufacturer: Freescale Semiconductor

Specifications of MCZ79076EGR2

• Applications: *
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Operating Temperature (max): 125C
• Operating Temperature (min): -30C
• Pin Count: 16
• Mounting: Surface Mount
• Package Type: SOIC W
• Screening Level: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2. Static Electrical Characteristics (continued)
values noted reflect the approximate parameter means at
Analog Integrated Circuit Device Data
Freescale Semiconductor
OUTPUTS
Notes
Ref/Dwell Threshold (Max Pump)
Bias Resistance to Ground
Bias Voltage (Bypass Mode)
Bias Voltage Regulation (Bypass Mode)
Bias Voltage (EST Mode)
Dwell Saturation Voltage
Dwell Reverse Clamp Voltage
Dwell Leakage Current
Reference Low
14.
15.
16.
17.
Characteristics noted under conditions
(V
10 mA, Dwell Control = open)
Increasing
Decreasing
Hysteresis
Dwell = V
Advance = 1.0 V, EST = Bypass = 0 V
Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V
Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V
V
3.0 V
V
EST = Bypass = 0 V
V
EST = Bypass = 0 V
V
EST = Bypass = 3.0 V
V
EST = Bypass = 3.0 V
V
Bypass = 0, Bias Voltage = Reference = open
I
0 V
R
CC
CC
CC
CC
CC
CC
CC
= sinking 0.3 mA, Ref/Dwell = Advance = 1.0 V, EST = Bypass =
Ref/Dwell Threshold Voltage (Max Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to
positive (or negative) going transition 1.5 V respectively. It is expressed as V
the additional voltage necessary to attain the threshold. Advance = 3.0 V providing maximum input assist or Max Pump" influence of
Dwell signal; Reference = Dwell Control = open.
All pins open except Pwr Gnd with Dwell sinking 200 mA.
Limit conditions with Dwell output NPN in the OFF condition.
Reference saturation voltage to ground with 0.3mA of current going into the Reference.
= 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0 V, Bypass =
= 4.0 V, I
= 16 V, I
= 24 V, I
= 36 V, I
= 16 V, Dwell = 5.0 V, Ref/Dwell = Advance = 3.0 V, EST =
= 16 V, Advance = 3.0 V, EST = Bypass = 0 V, Dwell sinking
CC
(17)
= Ref/Dwell = Reference = Dwell Control = open,
D
D
D
D
= 160 mA, Ref/Dwell = Advance =3.0 V,
= 240 mA, Ref/Dwell = Advance =1.0 V,
= 360 mA, Ref/Dwell = Advance =1.0 V,
= 40 mA, Ref/Dwell = Advance =3.0 V,
(16)
Characteristic
(15)
(14)
7.0 V ≤ V
CC
≤ 18 V, - 40°C ≤ T
T
A
=
25°C under nominal conditions unless otherwise noted.
V
V
V
HYS(R/D)MP
TH+(R/D)MP
TH-(R/D)MP
Symbol
V
V
V
V
V
V
I
(R)LOW
(D)REV
(B)EST
(D)SAT
(D)KG
A
R
(B)BP
(B)BP
(B)
≤ 125°C, GND = 0 V
TH±(RD)
= V
V
V
V
B
B
B
0.55
2.25
+ 0.175
+ 0.115
+ 0.025
B
Min
-0.9
1.9
STATIC ELECTRICAL CHARACTERISTICS
-
-
-
-
-
-
-
+ V
X
where V
V
V
V
ELECTRICAL CHARACTERISTICS
unless otherwise noted. Typical
B
B
B
0.044
-0.98
0.68
2.43
2.04
0.05
0.14
0.20
0.29
0.13
Typ
+ 0.474
+ 0.425
+ 0.048
30
B
is the Bias Voltage and V
V
V
B
B
Max
+ 0.735
0.24
0.35
0.22
-1.2
+ 0.80
0.9
2.6
2.2
0.1
0.5
40
50
-
Unit
mV
kΩ
µA
V
V
V
V
V
V
79076
X
is
7