PEB 2026 T-S V1.1 Infineon Technologies, PEB 2026 T-S V1.1 Datasheet - Page 13

• Manufacturer Part Number: PEB 2026 T-S V1.1
• Description: IC CTRLR N-CH ISDN HV PDSO-20-6
• Manufacturer: Infineon Technologies

Specifications of PEB 2026 T-S V1.1

• Applications: *
• Mounting Type: Surface Mount
• Package / Case: DSO-20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PEB2026TSV1.1T; PEB2026TSV11NK; SP000007177; SP000225732

The diodes connected to GNDB and RB protect the IHPC against lightning and
overvoltages (see Absolute Maximum Ratings). The diode
drain-diode of the DMOS-transistor
Because of technology reasons („p“-substrate, junction isolation) there are also parasitic
diodes from pin
I
When line feeding is switched on (transistor
pins RA and GNDB (or GNDD) then it needs a certain time to unload the gate-source-
capacitance of
a current peak
An overvoltage protection circuit for pin RA, for example can produce such a short circuit
between pins RA and GNDB.
In the IHPC a fast bipolar npn-transistor limits such current peaks. With V
resulting
about 1.5A and a time duration (50% to 50%) of about 130nsec.
•
Data Sheet
BAT
current peak:
I
BAT
current transient has the profile of one triangular pulse with a peak value of
T
I
BAT
V
L
BAT
and to limit the current to the defined maximum value. In the meantime
on the supply voltage
to all other pins.
T
L
.
V
BAT
3-3
T
can be seen.
L
is on) and a short circuit occurs between
Functional Description
D
p
is the parasitic bulk-
BAT
=100 V, the
PEB 2026
PEF 2026
09.99