TLP558 Toshiba, TLP558 Datasheet - Page 2

• Manufacturer Part Number: TLP558
• Description: PHOTOCPLR TRANS INVERTER 8-DIP
• Manufacturer: Toshiba

Specifications of TLP558

• Voltage - Isolation: 2500Vrms
• Number Of Channels: 1, Unidirectional
• Current - Output / Channel: 40mA
• Propagation Delay High - Low @ If: 270ns @ 0 ~ 3mA
• Current - Dc Forward (if): 10mA
• Input Type: DC
• Output Type: Push-Pull, Totem-Pole
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
(no derating required up to 85°C unless otherwise noted)
Recommended Operating Conditions
Operating temperature range
Storage temperature range
Lead solder temperature(10s)**
Isolation voltage(AC, 1min., R.H.≤ 60%, Ta=25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Pulse width ≤ 1μs, 300pps.
(Note 2) Pulse width ≤ 5μs, duty ratio ≤ 0.025.
(Note 3) Derate 1.8mW / °C above 70°C ambient temperature.
(Note 4) Derate 3.6mW / °C above 70°C ambient temperature.
(Note 5) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
Input current, on
Input voltage, off
Supply voltage
Enable voltage high
Enable voltage low
Fan out(TTL load)
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
*
**1.6mm below seating plane.
2mA condition permits at least 20% CTR degradation guardband.
Initial switching threshold is 1.6mA or less.
Forward current
Peak transient forward current
Reverse voltage
Output current
Peak output current
Output voltage
Supply voltage
Three state enabel voltage
Output power dissipation
Total package power dissipation
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
together.
Characteristic
Charactersitic
V
Symbol
I
F(ON)
F(OFF)
V
V
T
V
N
CC
EH
opr
EL
Min.
− 25
4.5
2.0
2*
―
0
0
2
Typ.
―
―
―
―
―
―
―
(Note 3)
(Note 1)
(Note 2)
(Note 4)
(Note 5)
Max.
0.8
0.8
20
20
85
5
4
Symbol
I
V
T
BV
T
T
I
FPT
V
V
V
P
P
OP
I
I
CC
opr
stg
sol
O
F
O
O
R
E
T
Unit
S
mA
°C
―
V
V
V
V
− 55~125
40 / − 25
80 / − 50
− 0.5~20
− 0.5~20
− 0.5~20
− 40~85
Rating
2500
100
200
260
10
1
5
Vrms
Unit
mW
mW
mA
mA
mA
°C
°C
°C
A
V
V
V
V
2007-10-01
TLP558