H11B1M Fairchild Optoelectronics Group, H11B1M Datasheet
H11B1M
Specifications of H11B1M
Related parts for H11B1M
H11B1M Summary of contents
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... Schematic ANODE 1 CATHODE 2 3 N/C ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 6 BASE 6 5 COLLECTOR 6 4 EMITTER September 2009 ...
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... CEO BV Collector-Base Breakdown Voltage CBO BV Emitter-Collector Breakdown Voltage ECO P Detector Power Dissipation @ T D Derate above 25°C I Continuous Collector Current C ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0 25°C unless otherwise specified.) A Parameter = 25° 25° 25° Value Units -50 to +150 ° ...
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... Transfer Characteristics Symbol Parameter DC CHARACTERISTICS I Collector Output Current* C(CTR) V Saturation Voltage* CE(SAT) AC CHARACTERISTICS t Turn-on Time on t Turn-off Time off BW (3, 4) Bandwidth ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0 25°C Unless otherwise specified.) A Test Conditions I = 10mA 1.0MHz F = 1.0mA 100µ ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0 25°C Unless otherwise specified.) (Continued) A Test Conditions ( 60Hz sec. VDC VDC (5) V ...
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... AMBIENT TEMPERATURE ( C) A Fig. 5 CTR vs. RBE (Saturated) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 R - BASE RESISTANCE (k BE ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 1.6 1.4 1.2 1 100 C A 0.2 0.0 0 100 1 ...
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... R - BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 (Continued) 5.0 4.5 4.0 3.5 3 2.5 2.0 1.5 1.0 0.5 10 100 10 vs. R off BE 10000 ...
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... Note: All dimensions in mm. ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... SR2V Marking Information Definitions ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 Example 4N32M Standard Through Hole Device (50 units per tube) 4N32SM Surface Mount Lead Bend 4N32SR2M Surface Mount; Tape and Reel (1,000 units per reel) 4N32TM 0.4" Lead Spacing ...
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... C 140 120 100 ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 260 C 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 9 Ø1.5 MIN 1 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.3 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...