H11D1M Fairchild Optoelectronics Group, H11D1M Datasheet - Page 3

• Manufacturer Part Number: H11D1M
• Description: PHOTOCOUPLER DARL OUT GP 6DIP
• Manufacturer: Fairchild Optoelectronics Group

Specifications of H11D1M

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 20% @ 2mA
• Voltage - Output: 300V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 80mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole
• Package / Case: 6-DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Other names: H11D1MFS

©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
*All Typical values at T
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
EMITTER
EMITTER
SWITCHING TIMES
Symbol
DETECTOR
Symbol
BV
BV
BV
BV
BV
V
I
I
BV
CE(SAT)
CER
CEO
CTR
V
C
t
I
t
OFF
V
T
R
CER
CEO
CBO
EBO
ECO
ON
F
J
A
F
R
Forward Voltage
Forward Voltage
Temp. Coefficient
Reverse Breakdown
Voltage
Junction Capacitance
Reverse Leakage
Current
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
(R
Current Transfer
Ratio, Collector to
Emitter
Saturation Voltage
Non-Saturated
Turn-on Time
Turn-off Time
BE
Characteristic
Characteristics
= 1M )
(2)
A
= 25°C
(2)
(2)
(T
(2)
(2)
A
(2)
= 25°C Unless otherwise specified.)
I
I
V
V
V
R
No RBE, I
I
I
I
V
V
V
V
V
V
No R
T
I
R
I
I
R
I
V
R
F
R
C
E
E
F
F
F
F
(T
A
F
F
R
CE
CE
CE
CE
CE
CE
BE
CE
BE
BE
L
= 10mA
= 100µA, I
= 100µA, I
Test Conditions
= 10mA, V
= 10mA, V
= 10mA, I
= 20mA, I
= 10µA
= 100µA, I
= 25°C
= 0V, f = 1MHz
= 1V, f = 1MHz
A
= 100
= 6V
= 300V, I
= 300V, I
= 200V, I
= 200V, I
= 100V, I
= 100V, I
= 1M , I
= 10V, I
= 1M
= 1M
BE
= 25°C unless otherwise specified.)
Test Conditions
, V
C
CE
= 1.0mA
C
C
CE
F
F
F
CE
CE
C
= 60V, I
F
F
F
F
F
F
= 0.5mA,
= 4mA
= 0
= 0
= 0
= 0, T
= 0, T
= 0, T
= 0, T
= 0, T
= 0, T
= 1.0mA, I
= 2mA,
= 10V,
= 10V
A
A
A
A
A
A
F
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 0,
3
F
= 0
H11D1M/2M/3M,
H11D1M/2M/3M,
MOC8204M
MOC8204M
Device
4N38M
4N38M
H11D1M/2M
H11D1M/2M
H11D1M/2M
MOC8204M
MOC8204M
MOC8204M
All
All
H11D3M
H11D3M
H11D3M
Device
4N38M
4N38M
4N38M
4N38M
All
All
All
All
All
All
2 (20)
2 (20)
Min.
Min.
400
300
200
400
300
200
80
80
6
7
7
Typ.*
0.1
Typ.*
5
5
1.15
0.05
-1.8
25
50
65
10
Max.
0.40
1.0
Max.
100
250
100
250
100
250
1.5
10
50
www.fairchildsemi.com
mA (%)
Units
mV/°C
µs
µs
Unit
V
µA
nA
µA
nA
µA
nA
µA
nA
pF
pF
V
V
V
V
V
V